Creation of Skyrmions by Electric Field on Chiral-Lattice Magnetic Insulators

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

It is theoretically proposed that magnetic skyrmions, nanometric spin vortices characterized by a quantized topological number, can be electrically created on a thin-film specimen of chiral-lattice magnetic insulator within a few nanoseconds by applying an electric field via an electrode tip taking advantage of coupling between noncollinear skyrmion spins and electric polarizations. This finding paves the way for utilizing multiferroic skyrmions as information carriers for low-energy-consuming magnetic storage devices without Joule-heating energy losses.

Original languageEnglish
Article number1500180
JournalAdvanced Electronic Materials
Volume2
Issue number1
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Magnetic storage
Joule heating
Energy dissipation
Vortex flow
Electric fields
Polarization
Data storage equipment
Thin films
Electrodes

Keywords

  • magnetic storage devices
  • multiferroics
  • skyrmion
  • spintronics
  • topological spin texture

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Creation of Skyrmions by Electric Field on Chiral-Lattice Magnetic Insulators. / Mochizuki, Masahito.

In: Advanced Electronic Materials, Vol. 2, No. 1, 1500180, 01.01.2016.

Research output: Contribution to journalArticle

@article{ae5d3e141ea64e29b6f8a06ccb8fc1e1,
title = "Creation of Skyrmions by Electric Field on Chiral-Lattice Magnetic Insulators",
abstract = "It is theoretically proposed that magnetic skyrmions, nanometric spin vortices characterized by a quantized topological number, can be electrically created on a thin-film specimen of chiral-lattice magnetic insulator within a few nanoseconds by applying an electric field via an electrode tip taking advantage of coupling between noncollinear skyrmion spins and electric polarizations. This finding paves the way for utilizing multiferroic skyrmions as information carriers for low-energy-consuming magnetic storage devices without Joule-heating energy losses.",
keywords = "magnetic storage devices, multiferroics, skyrmion, spintronics, topological spin texture",
author = "Masahito Mochizuki",
year = "2016",
month = "1",
day = "1",
doi = "10.1002/aelm.201500180",
language = "English",
volume = "2",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Creation of Skyrmions by Electric Field on Chiral-Lattice Magnetic Insulators

AU - Mochizuki, Masahito

PY - 2016/1/1

Y1 - 2016/1/1

N2 - It is theoretically proposed that magnetic skyrmions, nanometric spin vortices characterized by a quantized topological number, can be electrically created on a thin-film specimen of chiral-lattice magnetic insulator within a few nanoseconds by applying an electric field via an electrode tip taking advantage of coupling between noncollinear skyrmion spins and electric polarizations. This finding paves the way for utilizing multiferroic skyrmions as information carriers for low-energy-consuming magnetic storage devices without Joule-heating energy losses.

AB - It is theoretically proposed that magnetic skyrmions, nanometric spin vortices characterized by a quantized topological number, can be electrically created on a thin-film specimen of chiral-lattice magnetic insulator within a few nanoseconds by applying an electric field via an electrode tip taking advantage of coupling between noncollinear skyrmion spins and electric polarizations. This finding paves the way for utilizing multiferroic skyrmions as information carriers for low-energy-consuming magnetic storage devices without Joule-heating energy losses.

KW - magnetic storage devices

KW - multiferroics

KW - skyrmion

KW - spintronics

KW - topological spin texture

UR - http://www.scopus.com/inward/record.url?scp=85010383265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010383265&partnerID=8YFLogxK

U2 - 10.1002/aelm.201500180

DO - 10.1002/aelm.201500180

M3 - Article

AN - SCOPUS:85010383265

VL - 2

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 1

M1 - 1500180

ER -