Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano; H. Ishiwata; S. Iriyama; R. Okada; S. Kitagoh; M. Watanabe; Y. Takano; T. Yamaguchi; H. Kawarada

doi:10.1016/j.physc.2009.12.065

Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, H. Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The superconducting transition temperatures (T_C) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 10²⁰ - 1 × 10²² cm^-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 10²⁰ cm^-3. T_C in (1 1 1) films does not have the tendency to saturate up to 1 × 10²² cm^-3, while T_C in (0 0 1) films saturates.

Original language	English
Pages (from-to)	S604-S607
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2009.12.065
Publication status	Published - 2010 Dec 1

Keywords

Boron-doped
Critical concentration
Diamond
Superconductor to insulator transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. / Kawano, A.; Ishiwata, H.; Iriyama, S.; Okada, R.; Kitagoh, S.; Watanabe, M.; Takano, Y.; Yamaguchi, T.; Kawarada, H.

In: Physica C: Superconductivity and its applications, Vol. 470, No. SUPPL.1, 01.12.2010, p. S604-S607.

Research output: Contribution to journal › Article › peer-review

@article{5cb5ac47c05d457b85cda1496aee6be8,

title = "Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond",

abstract = "The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.",

keywords = "Boron-doped, Critical concentration, Diamond, Superconductor to insulator transition",

author = "A. Kawano and H. Ishiwata and S. Iriyama and R. Okada and S. Kitagoh and M. Watanabe and Y. Takano and T. Yamaguchi and H. Kawarada",

year = "2010",

month = dec,

day = "1",

doi = "10.1016/j.physc.2009.12.065",

language = "English",

volume = "470",

pages = "S604--S607",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SUPPL.1",

}

TY - JOUR

T1 - Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

AU - Kawano, A.

AU - Ishiwata, H.

AU - Iriyama, S.

AU - Okada, R.

AU - Kitagoh, S.

AU - Watanabe, M.

AU - Takano, Y.

AU - Yamaguchi, T.

AU - Kawarada, H.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

AB - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

KW - Boron-doped

KW - Critical concentration

KW - Diamond

KW - Superconductor to insulator transition

UR - http://www.scopus.com/inward/record.url?scp=78649716531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649716531&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2009.12.065

DO - 10.1016/j.physc.2009.12.065

M3 - Article

AN - SCOPUS:78649716531

VL - 470

SP - S604-S607

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - SUPPL.1

ER -