TY - JOUR
T1 - Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond
AU - Kawano, A.
AU - Ishiwata, H.
AU - Iriyama, S.
AU - Okada, R.
AU - Kitagoh, S.
AU - Watanabe, M.
AU - Takano, Y.
AU - Yamaguchi, T.
AU - Kawarada, H.
N1 - Funding Information:
A part of this work was supported by Grant in aid for scientific research S ( A07102000 ) of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) , Japan.
PY - 2010/12
Y1 - 2010/12
N2 - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.
AB - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.
KW - Boron-doped
KW - Critical concentration
KW - Diamond
KW - Superconductor to insulator transition
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U2 - 10.1016/j.physc.2009.12.065
DO - 10.1016/j.physc.2009.12.065
M3 - Article
AN - SCOPUS:78649716531
VL - 470
SP - S604-S607
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - SUPPL.1
ER -