Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano; H. Ishiwata; S. Iriyama; R. Okada; S. Kitagoh; M. Watanabe; Y. Takano; T. Yamaguchi; H. Kawarada

doi:10.1016/j.physc.2009.12.065

Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, H. Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The superconducting transition temperatures (T_C) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 10²⁰ - 1 × 10²² cm^-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 10²⁰ cm^-3. T_C in (1 1 1) films does not have the tendency to saturate up to 1 × 10²² cm^-3, while T_C in (0 0 1) films saturates.

Original language	English
Pages (from-to)	S604-S607
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2009.12.065
Publication status	Published - 2010 Dec 1

Keywords

Boron-doped
Critical concentration
Diamond
Superconductor to insulator transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/j.physc.2009.12.065

Fingerprint Dive into the research topics of 'Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond'. Together they form a unique fingerprint.

Cite this

Kawano, A., Ishiwata, H., Iriyama, S., Okada, R., Kitagoh, S., Watanabe, M., Takano, Y., Yamaguchi, T., & Kawarada, H. (2010). Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. Physica C: Superconductivity and its applications, 470(SUPPL.1), S604-S607. https://doi.org/10.1016/j.physc.2009.12.065

Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. / Kawano, A.; Ishiwata, H.; Iriyama, S.; Okada, R.; Kitagoh, S.; Watanabe, M.; Takano, Y.; Yamaguchi, T.; Kawarada, H.

In: Physica C: Superconductivity and its applications, Vol. 470, No. SUPPL.1, 01.12.2010, p. S604-S607.

Research output: Contribution to journal › Article

@article{5cb5ac47c05d457b85cda1496aee6be8,

title = "Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond",

abstract = "The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.",

keywords = "Boron-doped, Critical concentration, Diamond, Superconductor to insulator transition",

author = "A. Kawano and H. Ishiwata and S. Iriyama and R. Okada and S. Kitagoh and M. Watanabe and Y. Takano and T. Yamaguchi and H. Kawarada",

year = "2010",

month = dec,

day = "1",

doi = "10.1016/j.physc.2009.12.065",

language = "English",

volume = "470",

pages = "S604--S607",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "SUPPL.1",

}

TY - JOUR

T1 - Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

AU - Kawano, A.

AU - Ishiwata, H.

AU - Iriyama, S.

AU - Okada, R.

AU - Kitagoh, S.

AU - Watanabe, M.

AU - Takano, Y.

AU - Yamaguchi, T.

AU - Kawarada, H.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

AB - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

KW - Boron-doped

KW - Critical concentration

KW - Diamond

KW - Superconductor to insulator transition

UR - http://www.scopus.com/inward/record.url?scp=78649716531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649716531&partnerID=8YFLogxK

U2 - 10.1016/j.physc.2009.12.065

DO - 10.1016/j.physc.2009.12.065

M3 - Article

AN - SCOPUS:78649716531

VL - 470

SP - S604-S607

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - SUPPL.1

ER -