Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, Hiroshi Kawarada

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    2 Citations (Scopus)

    Abstract

    The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

    Original languageEnglish
    JournalPhysica C: Superconductivity and its Applications
    Volume470
    Issue numberSUPPL.1
    DOIs
    Publication statusPublished - 2010 Dec

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    Keywords

    • Boron-doped
    • Critical concentration
    • Diamond
    • Superconductor to insulator transition

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

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