Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond

A. Kawano, H. Ishiwata, S. Iriyama, R. Okada, S. Kitagoh, M. Watanabe, Y. Takano, T. Yamaguchi, Hiroshi Kawarada

    Research output: Contribution to journal › Article

    2 Citations (Scopus)

    Abstract

    The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

    Original languageEnglish
    JournalPhysica C: Superconductivity and its Applications
    Volume470
    Issue numberSUPPL.1
    DOIs
    Publication statusPublished - 2010 Dec

    Fingerprint

    Diamond
    Boron
    Superconducting materials
    Chemical vapor deposition
    Diamonds
    boron
    diamonds
    insulators
    vapor deposition
    Diamond films
    diamond films
    Superconducting transition temperature
    tendencies
    transition temperature
    Microwaves
    Plasmas
    microwaves

    Keywords

    • Boron-doped
    • Critical concentration
    • Diamond
    • Superconductor to insulator transition

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

    Cite this

    Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. / Kawano, A.; Ishiwata, H.; Iriyama, S.; Okada, R.; Kitagoh, S.; Watanabe, M.; Takano, Y.; Yamaguchi, T.; Kawarada, Hiroshi.

    In: Physica C: Superconductivity and its Applications, Vol. 470, No. SUPPL.1, 12.2010.

    Research output: Contribution to journal › Article

    Kawano, A, Ishiwata, H, Iriyama, S, Okada, R, Kitagoh, S, Watanabe, M, Takano, Y, Yamaguchi, T & Kawarada, H 2010, 'Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond', Physica C: Superconductivity and its Applications, vol. 470, no. SUPPL.1. https://doi.org/10.1016/j.physc.2009.12.065
    Kawano A, Ishiwata H, Iriyama S, Okada R, Kitagoh S, Watanabe M et al. Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. Physica C: Superconductivity and its Applications. 2010 Dec;470(SUPPL.1). https://doi.org/10.1016/j.physc.2009.12.065
    Kawano, A. ; Ishiwata, H. ; Iriyama, S. ; Okada, R. ; Kitagoh, S. ; Watanabe, M. ; Takano, Y. ; Yamaguchi, T. ; Kawarada, Hiroshi. / Critical concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) CVD boron-doped diamond. In: Physica C: Superconductivity and its Applications. 2010 ; Vol. 470, No. SUPPL.1.
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    AU - Ishiwata, H.

    AU - Iriyama, S.

    AU - Okada, R.

    AU - Kitagoh, S.

    AU - Watanabe, M.

    AU - Takano, Y.

    AU - Yamaguchi, T.

    AU - Kawarada, Hiroshi

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    AB - The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.

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    KW - Diamond

    KW - Superconductor to insulator transition

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