Abstract
The superconducting transition temperatures (TC) of (1 1 1) and (0 0 1) boron-doped diamond films deposited by microwave plasma assisted chemical vapor deposition (MPCVD) are investigated in the wide boron concentration range of 1 × 1020 - 1 × 1022 cm-3. The critical boron concentrations of superconductor to insulator transition in (1 1 1) and (0 0 1) films are 3 × 1020 cm-3. TC in (1 1 1) films does not have the tendency to saturate up to 1 × 1022 cm-3, while TC in (0 0 1) films saturates.
Original language | English |
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Pages (from-to) | S604-S607 |
Journal | Physica C: Superconductivity and its applications |
Volume | 470 |
Issue number | SUPPL.1 |
DOIs | |
Publication status | Published - 2010 Dec 1 |
Keywords
- Boron-doped
- Critical concentration
- Diamond
- Superconductor to insulator transition
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering