Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Kei Hasegawa, Chiaki Takazawa, Makoto Fujita, Suguru Noda, Manabu Ihara

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

Original languageEnglish
Pages (from-to)1774-1778
Number of pages5
JournalCrystEngComm
Volume20
Issue number13
DOIs
Publication statusPublished - 2018

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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