Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Kei Hasegawa, Chiaki Takazawa, Makoto Fujita, Suguru Noda, Manabu Ihara

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

    Original languageEnglish
    Pages (from-to)1774-1778
    Number of pages5
    JournalCrystEngComm
    Volume20
    Issue number13
    DOIs
    Publication statusPublished - 2018 Jan 1

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

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