Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

Kei Hasegawa, Chiaki Takazawa, Makoto Fujita, Suguru Noda, Manabu Ihara

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

    Original languageEnglish
    Pages (from-to)1774-1778
    Number of pages5
    JournalCrystEngComm
    Volume20
    Issue number13
    DOIs
    Publication statusPublished - 2018 Jan 1

    Fingerprint

    Vapor deposition
    Defect density
    Seed
    seeds
    Solar cells
    surface roughness
    solar cells
    Surface roughness
    vapor deposition
    Epitaxial films
    defects
    Epitaxial growth
    epitaxy
    roughness
    Heating
    Thin films
    heating
    thin films

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition. / Hasegawa, Kei; Takazawa, Chiaki; Fujita, Makoto; Noda, Suguru; Ihara, Manabu.

    In: CrystEngComm, Vol. 20, No. 13, 01.01.2018, p. 1774-1778.

    Research output: Contribution to journalArticle

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