Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa; Kazuhide Kumakura; Tetsuya Akasaka; Toshiki Makimoto

doi:10.1016/j.spmi.2006.09.008

Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-Al_xGa_1-xN/n-Al_xGa_1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al_0.22Ga_0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (V_B)² / R_on, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.

Original language	English
Pages (from-to)	332-337
Number of pages	6
Journal	Superlattices and Microstructures
Volume	40
Issue number	4-6 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.spmi.2006.09.008
Publication status	Published - 2006 Oct 1
Externally published	Yes

Keywords

AlGaN
Critical electric field
Vertical conducting diode

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{137a6bfce48d4ddbaa94703b91883339,

title = "Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates",

abstract = "We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.",

keywords = "AlGaN, Critical electric field, Vertical conducting diode",

author = "Atsushi Nishikawa and Kazuhide Kumakura and Tetsuya Akasaka and Toshiki Makimoto",

year = "2006",

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doi = "10.1016/j.spmi.2006.09.008",

language = "English",

volume = "40",

pages = "332--337",

journal = "Superlattices and Microstructures",

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T1 - Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

PY - 2006/10/1

Y1 - 2006/10/1

N2 - We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.

AB - We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.

KW - AlGaN

KW - Critical electric field

KW - Vertical conducting diode

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