Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.

Original languageEnglish
Pages (from-to)332-337
Number of pages6
JournalSuperlattices and Microstructures
Volume40
Issue number4-6 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Oct
Externally publishedYes

Fingerprint

Diodes
diodes
Electric fields
conduction
electric fields
Energy gap
Substrates
p-i-n diodes
Metallorganic vapor phase epitaxy
Electric breakdown
Chemical analysis
electrical faults
vapor phase epitaxy
figure of merit
low pressure
energy
electronics
aluminum gallium nitride
Temperature

Keywords

  • AlGaN
  • Critical electric field
  • Vertical conducting diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

In: Superlattices and Microstructures, Vol. 40, No. 4-6 SPEC. ISS., 10.2006, p. 332-337.

Research output: Contribution to journalArticle

Nishikawa, Atsushi ; Kumakura, Kazuhide ; Akasaka, Tetsuya ; Makimoto, Toshiki. / Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates. In: Superlattices and Microstructures. 2006 ; Vol. 40, No. 4-6 SPEC. ISS. pp. 332-337.
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