Abstract
We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.
| Original language | English |
|---|---|
| Pages (from-to) | 332-337 |
| Number of pages | 6 |
| Journal | Superlattices and Microstructures |
| Volume | 40 |
| Issue number | 4-6 SPEC. ISS. |
| DOIs | |
| Publication status | Published - 2006 Oct |
| Externally published | Yes |
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Keywords
- AlGaN
- Critical electric field
- Vertical conducting diode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.
In: Superlattices and Microstructures, Vol. 40, No. 4-6 SPEC. ISS., 10.2006, p. 332-337.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Critical electric fields of AlGaN in AlGaN-based vertical conducting diodes on n-SiC substrates
AU - Nishikawa, Atsushi
AU - Kumakura, Kazuhide
AU - Akasaka, Tetsuya
AU - Makimoto, Toshiki
PY - 2006/10
Y1 - 2006/10
N2 - We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.
AB - We have succeeded in obtaining high critical electric fields from AlGaN layers using the p-InGaN/i-AlxGa1-xN/n-AlxGa1-xN (x = 0 - 0.22) vertical conducting diodes grown on n-SiC substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) increases with increasing Al composition of the AlGaN layer. The corresponding critical electric fields are calculated to be 2.4 MV/cm for GaN and 3.5 MV/cm for Al0.22Ga0.78N. The critical electric field is proportional to the bandgap energy to a power of 2.5. This bandgap energy dependence is much stronger than that in the empirical expression proposed by Sze and Gibbons. The figure of merit, (VB)2 / Ron, increases with increasing Al composition, indicating the AlGaN-based p - i - n diodes are promising for high-power and high-temperature electronic device applications.
KW - AlGaN
KW - Critical electric field
KW - Vertical conducting diode
UR - http://www.scopus.com/inward/record.url?scp=33845193634&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33845193634&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2006.09.008
DO - 10.1016/j.spmi.2006.09.008
M3 - Article
AN - SCOPUS:33845193634
VL - 40
SP - 332
EP - 337
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 4-6 SPEC. ISS.
ER -