Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

Shin Ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani, Syoji Yamada

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

Original languageEnglish
Pages (from-to)161-166
Number of pages6
JournalJournal of Crystal Growth
Volume227
Issue number228
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes

Fingerprint

Resonant tunneling diodes
resonant tunneling diodes
Photoluminescence
Buffers
buffers
Substrates
blue shift
red shift
photoluminescence
gallium arsenide

Keywords

  • A1. Low dimensional structure
  • A3. Molecular beam epitaxy
  • B1. Arsenates
  • B2. Semiconducting III-V materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates. / Gozu, Shin Ichiro; Kita, Tomohiro; Kikutani, Tomoyuki; Yamada, Syoji.

In: Journal of Crystal Growth, Vol. 227, No. 228, 01.01.2001, p. 161-166.

Research output: Contribution to journalArticle

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AU - Yamada, Syoji

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