Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

Shin Ichiro Gozu, Tomohiro Kita, Tomoyuki Kikutani, Syoji Yamada

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have studied critical layer thickness (CLT) in an In0.75Ga0.25As resonant tunneling diode structure grown on a GaAs substrate via an InAlAs step-graded buffer (SGB) with two types of inverse step(IS)-SGB. We have observed red or blue shift in photoluminescence spectra and CLT change depending on SGB condition. This change reflects from the difference of residual strain InAlAs SGBs adopted here.

Original languageEnglish
Pages (from-to)161-166
Number of pages6
JournalJournal of Crystal Growth
Issue number228
Publication statusPublished - 2001 Jul
Externally publishedYes


  • A1. Low dimensional structure
  • A3. Molecular beam epitaxy
  • B1. Arsenates
  • B2. Semiconducting III-V materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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