Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs

T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalConference article

Abstract

Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the atomic arrangement of the c-GaN (11̄0) surface depended on the crystal quality of the c-GaN epilayer. For high quality c-GaN regions, the STM image confirmed that the c-GaN (11̄0) surface was a 1 × 1 reconstruction in analogy to GaAs. On the other hand, for poor quality c-GaN regions, a structure different from the 1 × 1 reconstruction was observed, which was the disordered structure composed of atomic rows along the growth direction. In addition, stacking faults parallel to the c-GaN (111) plane, which gave rise to hexagonal GaN inclusions in the c-GaN epilayer, were characterized in real space.

Original languageEnglish
Pages (from-to)345-350
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume180
Issue number1
DOIs
Publication statusPublished - 2000 Jul 1
Externally publishedYes
Event3rd International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2000) - Zeuthen/Berlin, Ger
Duration: 2000 Mar 62000 Mar 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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