Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, Hiroshi Kawarada

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    10 Citations (Scopus)


    The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

    Original languageEnglish
    JournalPhysica C: Superconductivity and its Applications
    Issue numberSUPPL.1
    Publication statusPublished - 2010 Dec



    • Boron-doped
    • Crystalline structure
    • Diamond
    • Superconductivity
    • Thin film

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Energy Engineering and Power Technology
    • Electronic, Optical and Magnetic Materials

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