Cross-sectional TEM study and film thickness dependence of Tc in heavily boron-doped superconducting diamond

S. Kitagoh, R. Okada, A. Kawano, M. Watanabe, Y. Takano, T. Yamaguchi, T. Chikyow, H. Kawarada

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The film thickness dependence of Tc in heavily B-doped diamond (1 1 1) and (0 0 1) films was investigated and cross-sectional transmission electron microscope observation was employed to investigate the crystalline structure of heavily B-doped diamond. (1 1 1) films with 5 nm or more and (0 0 1) films with 40 nm or more show superconducting transition. Few dislocations are observed in 500 nm from the interface between the substrate and B-doped homoepitaxial layer in (1 1 1) film and defective structure observed in (0 0 1) film.

Original languageEnglish
Pages (from-to)S610-S612
JournalPhysica C: Superconductivity and its applications
Volume470
Issue numberSUPPL.1
DOIs
Publication statusPublished - 2010 Dec 1

Keywords

  • Boron-doped
  • Crystalline structure
  • Diamond
  • Superconductivity
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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