TY - JOUR
T1 - Cryogenic operation of surface-channel diamond field-effect transistors
AU - Ishizaka, Hiroaki
AU - Tachiki, Minoru
AU - Song, Kwang Soup
AU - Umezawa, Hitoshi
AU - Kawarada, Hiroshi
N1 - Funding Information:
The authors thank Mr Shimura, Mr Matsumoto and Mr Ohkubo of Micro Technology Laboratory at Waseda University. This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.
PY - 2003
Y1 - 2003
N2 - Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.
AB - Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.
KW - Cryogenic temperature
KW - Hydrogen-terminated diamond
KW - MISFET
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U2 - 10.1016/S0925-9635(03)00208-5
DO - 10.1016/S0925-9635(03)00208-5
M3 - Article
AN - SCOPUS:0346119975
VL - 12
SP - 1800
EP - 1803
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 10-11
ER -