Cryogenic operation of surface-channel diamond field-effect transistors

Hiroaki Ishizaka, Minoru Tachiki, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journal › Article

    6 Citations (Scopus)

    Abstract

    Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.

    Original languageEnglish
    Pages (from-to)1800-1803
    Number of pages4
    JournalDiamond and Related Materials
    Volume12
    Issue number10-11
    DOIs
    Publication statusPublished - 2003 Oct

    Fingerprint

    Diamond
    Field effect transistors
    Cryogenics
    cryogenics
    Hydrogen
    Diamonds
    field effect transistors
    diamonds
    MIS (semiconductors)
    MISFET devices
    hydrogen
    Electrodes
    Phonon scattering
    electrodes
    Transconductance
    transconductance
    Activation energy
    Metals
    insulators
    Semiconductor materials

    Keywords

    • Cryogenic temperature
    • Hydrogen-terminated diamond
    • MISFET

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Cryogenic operation of surface-channel diamond field-effect transistors. / Ishizaka, Hiroaki; Tachiki, Minoru; Song, Kwang Soup; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 12, No. 10-11, 10.2003, p. 1800-1803.

    Research output: Contribution to journal › Article

    Ishizaka, H, Tachiki, M, Song, KS, Umezawa, H & Kawarada, H 2003, 'Cryogenic operation of surface-channel diamond field-effect transistors', Diamond and Related Materials, vol. 12, no. 10-11, pp. 1800-1803. https://doi.org/10.1016/S0925-9635(03)00208-5
    Ishizaka H, Tachiki M, Song KS, Umezawa H, Kawarada H. Cryogenic operation of surface-channel diamond field-effect transistors. Diamond and Related Materials. 2003 Oct;12(10-11):1800-1803. https://doi.org/10.1016/S0925-9635(03)00208-5
    Ishizaka, Hiroaki ; Tachiki, Minoru ; Song, Kwang Soup ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Cryogenic operation of surface-channel diamond field-effect transistors. In: Diamond and Related Materials. 2003 ; Vol. 12, No. 10-11. pp. 1800-1803.
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    abstract = "Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.",
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    AU - Tachiki, Minoru

    AU - Song, Kwang Soup

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

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    AB - Cryogenic operation of field-effect transistors (FETs) fabricated on hydrogen-terminated (H-terminated) diamond surface conductive layers is investigated. 5-μm gate-length metal-insulator- semiconductor FETs (MISFETs) is fabricated using CaF2 film as a gate insulator. The MISFETs operate successfully even at 4.4 K. At low temperature, the contact between source/drain electrode and H-terminated diamond surface cannot maintain ohmic characteristics, because the thermal activation energy of the carriers is not high enough to overcome the barrier height at the interfaces between the source electrode and the H-terminated diamond. Estimated channel mobility increases from 63 cm2/V-s to 137 cm2/V-s and the maximum transconductance increases from 10.5 mS/mm to 14.5 mS/mm, as the temperature decreases from 300 K to 4.4 K, indicating reduced phonon scattering of the channel.

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