Abstract
Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 142-147 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 212 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5 . / Sekar, C.; Watanabe, T.; Matsuda, Azusa.
In: Journal of Crystal Growth, Vol. 212, No. 1, 2000, p. 142-147.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5
AU - Sekar, C.
AU - Watanabe, T.
AU - Matsuda, Azusa
PY - 2000
Y1 - 2000
N2 - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.
AB - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.
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U2 - 10.1016/S0022-0248(00)00009-9
DO - 10.1016/S0022-0248(00)00009-9
M3 - Article
AN - SCOPUS:0033737539
VL - 212
SP - 142
EP - 147
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -