Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5

C. Sekar; T. Watanabe; A. Matsuda

doi:10.1016/S0022-0248(00)00009-9

Crystal growth and characterization of the 4-leg spin ladder compound La₂Cu₂O₅

C. Sekar, T. Watanabe, A. Matsuda

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Crystallization of La₂Cu₂O₅ has been investigated in the La₂O₃-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La₈Cu₇O₁₉ phase, just above that of La₂Cu₂O₅. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La₂Cu₂O₅ have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×10³ Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

Original language	English
Pages (from-to)	142-147
Number of pages	6
Journal	Journal of Crystal Growth
Volume	212
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(00)00009-9
Publication status	Published - 2000 Jan 1

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Sekar, C., Watanabe, T., & Matsuda, A. (2000). Crystal growth and characterization of the 4-leg spin ladder compound La₂Cu₂O₅. Journal of Crystal Growth, 212(1), 142-147. https://doi.org/10.1016/S0022-0248(00)00009-9

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title = "Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5",

abstract = "Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.",

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N2 - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

AB - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

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