Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5

C. Sekar; T. Watanabe; A. Matsuda

doi:10.1016/S0022-0248(00)00009-9

Crystal growth and characterization of the 4-leg spin ladder compound La₂Cu₂O₅

C. Sekar, T. Watanabe, A. Matsuda

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Crystallization of La₂Cu₂O₅ has been investigated in the La₂O₃-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La₈Cu₇O₁₉ phase, just above that of La₂Cu₂O₅. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La₂Cu₂O₅ have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×10³ Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

Original language	English
Pages (from-to)	142-147
Number of pages	6
Journal	Journal of Crystal Growth
Volume	212
Issue number	1
DOIs	https://doi.org/10.1016/S0022-0248(00)00009-9
Publication status	Published - 2000 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(00)00009-9

Fingerprint Dive into the research topics of 'Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5'. Together they form a unique fingerprint.

Cite this

@article{a088b176b6794f688d5e7f3f661e1dab,

title = "Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5",

abstract = "Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.",

author = "C. Sekar and T. Watanabe and A. Matsuda",

year = "2000",

month = jan,

day = "1",

doi = "10.1016/S0022-0248(00)00009-9",

language = "English",

volume = "212",

pages = "142--147",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Crystal growth and characterization of the 4-leg spin ladder compound La2Cu2O5

AU - Sekar, C.

AU - Watanabe, T.

AU - Matsuda, A.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

AB - Crystallization of La2Cu2O5 has been investigated in the La2O3-CUO system for various starting compositions both in air and oxygen atmospheres. In air, we find that there exists a new region of crystallization of La8Cu7O19 phase, just above that of La2Cu2O5. However, this region vanishes completely in flowing-oxygen atmosphere. By utilizing this, large single crystals of the 4-leg spin-ladder compound La2Cu2O5 have been successfully grown from CuO flux by the slow cooling method. Room-temperature resistivity parallel to the ladder direction (∥b) of the as-grown crystals is estimated to be 1.7×103 Ω cm. A significant decrease in the resistivity (798 mΩ cm at 300 K) is observed upon hole doping by means of high oxygen pressure annealing (approximately 400 atm) using a hot isostatic pressing furnace. However, no transition was observed from the semiconducting behavior.

UR - http://www.scopus.com/inward/record.url?scp=0033737539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033737539&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(00)00009-9

DO - 10.1016/S0022-0248(00)00009-9

M3 - Article

AN - SCOPUS:0033737539

VL - 212

SP - 142

EP - 147

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -