Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Koji Moriguchi, Nobuhiro Okada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We attempted the traveling solvent method (TSM) growth of SiC on 6H-SiC(0001) substrates using Si and Si-M (M=Ti, Cr and Dy) solvents at growth temperatures of 1500-1800°C. It was confirmed that 4H-SiC polytype was extremely stabilized in the highly carbon dissolved liquid phase. 4H-SiC growth on 6H-SiC, i.e. hetropolytype epitaxial growth, was observed only from Si-Dy solvent. The Dy content above 60at% was necessary to obtain 100% 4H-SiC polytype.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages36-39
Number of pages4
Volume679-680
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010 - Oslo, Norway
Duration: 2010 Aug 292010 Sep 2

Publication series

NameMaterials Science Forum
Volume679-680
ISSN (Print)02555476

Other

Other8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010
CountryNorway
CityOslo
Period10/8/2910/9/2

Keywords

  • 4H-SiC
  • Heteropolytype epitaxial growth
  • Traveling solvent method

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Kusunoki, K., Kamei, K., Yashiro, N., Moriguchi, K., & Okada, N. (2011). Crystal growth of 4H-SiC on 6H-SiC by traveling solvent method. In Materials Science Forum (Vol. 679-680, pp. 36-39). (Materials Science Forum; Vol. 679-680). https://doi.org/10.4028/www.scientific.net/MSF.679-680.36