Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalThin Solid Films
Volume476
Issue number1
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Keywords

  • 260 Liquid-phase epitaxy
  • 403 Raman scattering
  • 435 Silicon carbide
  • 446 Stress

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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    Ujihara, T., Munetoh, S., Kusunoki, K., Kamei, K., Usami, N., Fujiwara, K., Sazaki, G., & Nakajima, K. (2005). Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study. Thin Solid Films, 476(1), 206-209. https://doi.org/10.1016/j.tsf.2004.09.039