Abstract
Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
| Original language | English |
|---|---|
| Pages (from-to) | 206-209 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 476 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2005 Apr 1 |
| Externally published | Yes |
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Keywords
- 260 Liquid-phase epitaxy
- 403 Raman scattering
- 435 Silicon carbide
- 446 Stress
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy : A Raman spectroscopic study. / Ujihara, Toru; Munetoh, Shinji; Kusunoki, Kazuhiko; Kamei, Kazuhito; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo.
In: Thin Solid Films, Vol. 476, No. 1, 01.04.2005, p. 206-209.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy
T2 - A Raman spectroscopic study
AU - Ujihara, Toru
AU - Munetoh, Shinji
AU - Kusunoki, Kazuhiko
AU - Kamei, Kazuhito
AU - Usami, Noritaka
AU - Fujiwara, Kozo
AU - Sazaki, Gen
AU - Nakajima, Kazuo
PY - 2005/4/1
Y1 - 2005/4/1
N2 - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
AB - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
KW - 260 Liquid-phase epitaxy
KW - 403 Raman scattering
KW - 435 Silicon carbide
KW - 446 Stress
UR - http://www.scopus.com/inward/record.url?scp=13844306231&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=13844306231&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.09.039
DO - 10.1016/j.tsf.2004.09.039
M3 - Article
AN - SCOPUS:13844306231
VL - 476
SP - 206
EP - 209
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -