Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara; Shinji Munetoh; Kazuhiko Kusunoki; Kazuhito Kamei; Noritaka Usami; Kozo Fujiwara; Gen Sazaki; Kazuo Nakajima

doi:10.1016/j.tsf.2004.09.039

Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Toru Ujihara^*, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Thin Solid Films
Volume	476
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2004.09.039
Publication status	Published - 2005 Apr 1
Externally published	Yes

Keywords

260 Liquid-phase epitaxy
403 Raman scattering
435 Silicon carbide
446 Stress

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

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10.1016/j.tsf.2004.09.039

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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy : A Raman spectroscopic study. / Ujihara, Toru; Munetoh, Shinji; Kusunoki, Kazuhiko; Kamei, Kazuhito; Usami, Noritaka; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo.

In: Thin Solid Films, Vol. 476, No. 1, 01.04.2005, p. 206-209.

Research output: Contribution to journal › Article › peer-review

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abstract = "Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.",

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T2 - A Raman spectroscopic study

AU - Ujihara, Toru

AU - Munetoh, Shinji

AU - Kusunoki, Kazuhiko

AU - Kamei, Kazuhito

AU - Usami, Noritaka

AU - Fujiwara, Kozo

AU - Sazaki, Gen

AU - Nakajima, Kazuo

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N2 - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

AB - Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.

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KW - 446 Stress

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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study

Abstract

Keywords

ASJC Scopus subject areas

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