Abstract
Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved.
| Original language | English |
|---|---|
| Pages (from-to) | 206-209 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 476 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2005 Apr 1 |
| Externally published | Yes |
Keywords
- 260 Liquid-phase epitaxy
- 403 Raman scattering
- 435 Silicon carbide
- 446 Stress
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
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Ujihara, T., Munetoh, S., Kusunoki, K., Kamei, K., Usami, N., Fujiwara, K., Sazaki, G., & Nakajima, K. (2005). Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: A Raman spectroscopic study. Thin Solid Films, 476(1), 206-209. https://doi.org/10.1016/j.tsf.2004.09.039