Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

Original languageEnglish
Pages (from-to)2850-2852
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number5 A
Publication statusPublished - 2003 May
Externally publishedYes


  • BiTiO
  • Ferroelectricity
  • Substitution
  • Tu ngsten

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Crystal structure and ferroelectric property of tungsten-substituted Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> thin films prepared by metal-organic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this