Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

Original languageEnglish
Pages (from-to)2850-2852
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number5 A
Publication statusPublished - 2003 May
Externally publishedYes

Fingerprint

Organic chemicals
Ferroelectric materials
metalorganic chemical vapor deposition
Tungsten
Chemical vapor deposition
tungsten
Crystal structure
Thin films
crystal structure
thin films
Ferroelectricity
Metals
ferroelectricity
Remanence
Metallorganic chemical vapor deposition
heat treatment
Substitution reactions
Heat treatment
spacing
Fatigue of materials

Keywords

  • BiTiO
  • Ferroelectricity
  • MOCVD
  • Substitution
  • Tu ngsten

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition. / Sakai, Tomohiro; Watanabe, Takayuki; Osada, Minoru; Kakihana, Masato; Noguchi, Yuji; Miyayama, Masaru; Funakubo, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 5 A, 05.2003, p. 2850-2852.

Research output: Contribution to journalArticle

Sakai, Tomohiro ; Watanabe, Takayuki ; Osada, Minoru ; Kakihana, Masato ; Noguchi, Yuji ; Miyayama, Masaru ; Funakubo, Hiroshi. / Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 5 A. pp. 2850-2852.
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AB - W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

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