Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution

K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihara, K. Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)

Abstract

The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm ·280mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray "-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages13-16
Number of pages4
Volume483-485
Publication statusPublished - 2005
Externally publishedYes
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: 2004 Aug 312004 Sep 4

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)02555476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period04/8/3104/9/4

Fingerprint

Crystalline materials
Crystals
X rays
Secondary ion mass spectrometry
Thermal gradients
Molten materials
Etching
Diffraction
Impurities

Keywords

  • 6H-SiC
  • Micropipe free
  • Molten KOH etching
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Kusunoki, K., Kamei, K., Ueda, Y., Naga, S., Ito, Y., Hasebe, M., ... Nakajima, K. (2005). Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution. In Materials Science Forum (Vol. 483-485, pp. 13-16). (Materials Science Forum; Vol. 483-485).

Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution. / Kusunoki, K.; Kamei, K.; Ueda, Y.; Naga, S.; Ito, Y.; Hasebe, M.; Ujihara, T.; Nakajima, K.

Materials Science Forum. Vol. 483-485 2005. p. 13-16 (Materials Science Forum; Vol. 483-485).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kusunoki, K, Kamei, K, Ueda, Y, Naga, S, Ito, Y, Hasebe, M, Ujihara, T & Nakajima, K 2005, Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution. in Materials Science Forum. vol. 483-485, Materials Science Forum, vol. 483-485, pp. 13-16, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 04/8/31.
Kusunoki K, Kamei K, Ueda Y, Naga S, Ito Y, Hasebe M et al. Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution. In Materials Science Forum. Vol. 483-485. 2005. p. 13-16. (Materials Science Forum).
Kusunoki, K. ; Kamei, K. ; Ueda, Y. ; Naga, S. ; Ito, Y. ; Hasebe, M. ; Ujihara, T. ; Nakajima, K. / Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution. Materials Science Forum. Vol. 483-485 2005. pp. 13-16 (Materials Science Forum).
@inproceedings{975cf531bbe44a65abace66eadd43d2f,
title = "Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution",
abstract = "The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm ·280mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray {"}-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.",
keywords = "6H-SiC, Micropipe free, Molten KOH etching, Solution growth",
author = "K. Kusunoki and K. Kamei and Y. Ueda and S. Naga and Y. Ito and M. Hasebe and T. Ujihara and K. Nakajima",
year = "2005",
language = "English",
isbn = "0878499636",
volume = "483-485",
series = "Materials Science Forum",
pages = "13--16",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution

AU - Kusunoki, K.

AU - Kamei, K.

AU - Ueda, Y.

AU - Naga, S.

AU - Ito, Y.

AU - Hasebe, M.

AU - Ujihara, T.

AU - Nakajima, K.

PY - 2005

Y1 - 2005

N2 - The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm ·280mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray "-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

AB - The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm ·280mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray "-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

KW - 6H-SiC

KW - Micropipe free

KW - Molten KOH etching

KW - Solution growth

UR - http://www.scopus.com/inward/record.url?scp=35148826078&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148826078&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0878499636

SN - 9780878499632

VL - 483-485

T3 - Materials Science Forum

SP - 13

EP - 16

BT - Materials Science Forum

ER -