Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes

Takuro Sugiyama, Yukio Furukawa, Hidetoshi Fujimura

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.

    Original languageEnglish
    Pages (from-to)330-333
    Number of pages4
    JournalChemical Physics Letters
    Volume405
    Issue number4-6
    DOIs
    Publication statusPublished - 2005 Apr 12

    Fingerprint

    Organic light emitting diodes (OLED)
    markers
    light emitting diodes
    Crystalline materials
    Diamines
    Amorphous films
    Crystallization
    diamines
    Degradation
    crystallization
    degradation
    solid state
    causes
    diphenyl
    neodymium pyrocatechin disulfonate

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Spectroscopy
    • Atomic and Molecular Physics, and Optics
    • Surfaces and Interfaces
    • Condensed Matter Physics

    Cite this

    Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes. / Sugiyama, Takuro; Furukawa, Yukio; Fujimura, Hidetoshi.

    In: Chemical Physics Letters, Vol. 405, No. 4-6, 12.04.2005, p. 330-333.

    Research output: Contribution to journalArticle

    @article{c07134a5e2a3427eac2d997f12a966f0,
    title = "Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes",
    abstract = "Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.",
    author = "Takuro Sugiyama and Yukio Furukawa and Hidetoshi Fujimura",
    year = "2005",
    month = "4",
    day = "12",
    doi = "10.1016/j.cplett.2005.02.059",
    language = "English",
    volume = "405",
    pages = "330--333",
    journal = "Chemical Physics Letters",
    issn = "0009-2614",
    publisher = "Elsevier",
    number = "4-6",

    }

    TY - JOUR

    T1 - Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes

    AU - Sugiyama, Takuro

    AU - Furukawa, Yukio

    AU - Fujimura, Hidetoshi

    PY - 2005/4/12

    Y1 - 2005/4/12

    N2 - Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.

    AB - Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4, 4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm-1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm-1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.

    UR - http://www.scopus.com/inward/record.url?scp=15944372554&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=15944372554&partnerID=8YFLogxK

    U2 - 10.1016/j.cplett.2005.02.059

    DO - 10.1016/j.cplett.2005.02.059

    M3 - Article

    VL - 405

    SP - 330

    EP - 333

    JO - Chemical Physics Letters

    JF - Chemical Physics Letters

    SN - 0009-2614

    IS - 4-6

    ER -