Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution

K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

Crystallinity of 4H-SiC bulk crystals obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimens. Marked reduction of basal plane dislocations, threading edge and screw dislocations during the growth of the on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles are related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages45-48
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Fingerprint

Screw dislocations
screw dislocations
crystallinity
Single crystals
evaluation
single crystals
Edge dislocations
Crystals
edge dislocations
Dislocations (crystals)
crystals
Etching
etching
atomic force microscopy
dipoles
Transmission electron microscopy
transmission electron microscopy

Keywords

  • 4H-SiC
  • AFM
  • Dislocation
  • EPD
  • Solution growth
  • TEM
  • Ti

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kamei, K., Kusunoki, K., Yashiro, N., Okada, N., Moriguchi, K., Daikoku, H., ... Bessho, T. (2012). Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. In Materials Science Forum (Vol. 717-720, pp. 45-48). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.45

Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. / Kamei, K.; Kusunoki, K.; Yashiro, N.; Okada, N.; Moriguchi, K.; Daikoku, H.; Kado, M.; Suzuki, H.; Sakamoto, H.; Bessho, T.

Materials Science Forum. Vol. 717-720 2012. p. 45-48 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kamei, K, Kusunoki, K, Yashiro, N, Okada, N, Moriguchi, K, Daikoku, H, Kado, M, Suzuki, H, Sakamoto, H & Bessho, T 2012, Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 45-48, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 11/9/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.45
Kamei K, Kusunoki K, Yashiro N, Okada N, Moriguchi K, Daikoku H et al. Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. In Materials Science Forum. Vol. 717-720. 2012. p. 45-48. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.45
Kamei, K. ; Kusunoki, K. ; Yashiro, N. ; Okada, N. ; Moriguchi, K. ; Daikoku, H. ; Kado, M. ; Suzuki, H. ; Sakamoto, H. ; Bessho, T. / Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution. Materials Science Forum. Vol. 717-720 2012. pp. 45-48 (Materials Science Forum).
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