Crystallinity evaluation of 4H-SiC single crystal grown by solution growth technique using Si-Ti-C solution

K. Kamei*, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho

*Corresponding author for this work

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