Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

Ayaka Suko, Junjun Jia, Shin Ichi Nakamura, Emi Kawashima, Futoshi Utsuno, Koki Yano, Yuzo Shigesato

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 C. At 600 C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

Original languageEnglish
Article number035504
JournalJapanese journal of applied physics
Volume55
Issue number3
DOIs
Publication statusPublished - 2016 Mar 1
Externally publishedYes

Fingerprint

gallium oxides
Gallium
Thin film transistors
Zinc oxide
zinc oxides
Indium
Oxide films
indium
oxide films
transistors
Crystallization
crystallization
thin films
Annealing
annealing
High resolution electron microscopy
Threshold voltage
diffraction
threshold voltage
Magnetron sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance. / Suko, Ayaka; Jia, Junjun; Nakamura, Shin Ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo.

In: Japanese journal of applied physics, Vol. 55, No. 3, 035504, 01.03.2016.

Research output: Contribution to journalArticle

Suko, Ayaka ; Jia, Junjun ; Nakamura, Shin Ichi ; Kawashima, Emi ; Utsuno, Futoshi ; Yano, Koki ; Shigesato, Yuzo. / Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance. In: Japanese journal of applied physics. 2016 ; Vol. 55, No. 3.
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