Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition

Ichiro Koiwa, Takao Kanehara, Juro Mita, Toshiyuki Iwabuchi, Tetsuya Osaka, Sachiko Ono, Masakatsu Maeda

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71 Citations (Scopus)

Abstract

By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr0.7Bi2.3Ta2O9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.

Original languageEnglish
Pages (from-to)4946-4951
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 SUPPL. B
Publication statusPublished - 1996 Sep 1

Keywords

  • Chemical liquid deposition
  • Crystallization
  • Ferroelectric thin film
  • Mixed alkoxide solution
  • SrBiTaO (SBTO) thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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