Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition

Ichiro Koiwa, Takao Kanehara, Juro Mita, Toshiyuki Iwabuchi, Tetsuya Osaka, Sachiko Ono, Masakatsu Maeda

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Abstract

By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr0.7Bi2.3Ta2O9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.

Original languageEnglish
Pages (from-to)4946-4951
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 SUPPL. B
Publication statusPublished - 1996 Sep

Fingerprint

Crystallization
crystallization
Thin films
heat
Liquids
liquids
thin films
alkoxides
Ferroelectric materials
Surface morphology
Raw materials
Carbon
Remanence
carbon
polarization
Hysteresis loops
Temperature
temperature
heat treatment
hysteresis

Keywords

  • Chemical liquid deposition
  • Crystallization
  • Ferroelectric thin film
  • Mixed alkoxide solution
  • SrBiTaO (SBTO) thin film

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition. / Koiwa, Ichiro; Kanehara, Takao; Mita, Juro; Iwabuchi, Toshiyuki; Osaka, Tetsuya; Ono, Sachiko; Maeda, Masakatsu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 9 SUPPL. B, 09.1996, p. 4946-4951.

Research output: Contribution to journalArticle

Koiwa, Ichiro ; Kanehara, Takao ; Mita, Juro ; Iwabuchi, Toshiyuki ; Osaka, Tetsuya ; Ono, Sachiko ; Maeda, Masakatsu. / Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 9 SUPPL. B. pp. 4946-4951.
@article{458d594606e44e478a67f432c083187e,
title = "Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition",
abstract = "By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr0.7Bi2.3Ta2O9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.",
keywords = "Chemical liquid deposition, Crystallization, Ferroelectric thin film, Mixed alkoxide solution, SrBiTaO (SBTO) thin film",
author = "Ichiro Koiwa and Takao Kanehara and Juro Mita and Toshiyuki Iwabuchi and Tetsuya Osaka and Sachiko Ono and Masakatsu Maeda",
year = "1996",
month = "9",
language = "English",
volume = "35",
pages = "4946--4951",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 SUPPL. B",

}

TY - JOUR

T1 - Crystallization of Sr0.7Bi2.3Ta2O9+α thin films by chemical liquid deposition

AU - Koiwa, Ichiro

AU - Kanehara, Takao

AU - Mita, Juro

AU - Iwabuchi, Toshiyuki

AU - Osaka, Tetsuya

AU - Ono, Sachiko

AU - Maeda, Masakatsu

PY - 1996/9

Y1 - 1996/9

N2 - By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr0.7Bi2.3Ta2O9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.

AB - By chemical liquid deposition in which an alkoxide with a carbon number of 4 or smaller was used as raw material, a Sr0.7Bi2.3Ta2O9+α (SBTO) thin film was fabricated for use as a ferroelectric memory device for the purpose of decreasing the temperature of crystallization and improving surface morphology. The crystallization process was also examined. Crystallization began when the film was heat treated in oxygen at 650°C. When it was heat treated at higher than 700°C, it showed ferroelectric properties, and the squareness (remanent polarization/saturation polarization) of its hysteresis loop was improved at 800°C. A film heat treated at temperature 650°C was a cluster of fine particles, and a film heat treated at 800°C was a cluster of large particles. A film heat treated at 700°C was a mixture of fine particles and large particles. Therefore, it is concluded that the alkoxide with a carbon number of 4 or smaller as raw material enable the lowering of the heat-treatment temperature and improvement of the surface morphology of SBTO thin films.

KW - Chemical liquid deposition

KW - Crystallization

KW - Ferroelectric thin film

KW - Mixed alkoxide solution

KW - SrBiTaO (SBTO) thin film

UR - http://www.scopus.com/inward/record.url?scp=0030234303&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030234303&partnerID=8YFLogxK

M3 - Article

VL - 35

SP - 4946

EP - 4951

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 SUPPL. B

ER -