Crystallographic and optical characterizations of Ag(Ga,Al)Te2 layers grown on c -plane sapphire substrates by closed space sublimation

Aya Uruno*, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al). (

Original languageEnglish
Pages (from-to)413-416
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-9
Publication statusPublished - 2016 Jul 1


  • Ag(Ga,Al)Te2
  • chalcopyrite
  • closed space sublimation

ASJC Scopus subject areas

  • Condensed Matter Physics


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