Abstract
Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al).
| Original language | English |
|---|---|
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| DOIs | |
| Publication status | Accepted/In press - 2016 |
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Keywords
- Ag(Ga,Al)Te2
- Chalcopyrite
- Closed space sublimation
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Crystallographic and optical characterizations of Ag(Ga,Al)Te2 layers grown on c -plane sapphire substrates by closed space sublimation. / Uruno, Aya; Takeda, Yuji; Inoue, Tomohiro; Kobayashi, Masakazu.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystallographic and optical characterizations of Ag(Ga,Al)Te2 layers grown on c -plane sapphire substrates by closed space sublimation
AU - Uruno, Aya
AU - Takeda, Yuji
AU - Inoue, Tomohiro
AU - Kobayashi, Masakazu
PY - 2016
Y1 - 2016
N2 - Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al).
AB - Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al).
KW - Ag(Ga,Al)Te2
KW - Chalcopyrite
KW - Closed space sublimation
UR - http://www.scopus.com/inward/record.url?scp=84959018695&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959018695&partnerID=8YFLogxK
U2 - 10.1002/pssc.201510269
DO - 10.1002/pssc.201510269
M3 - Article
AN - SCOPUS:84959018695
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
ER -