Crystallographic and optical characterizations of Ag(Ga,Al)Te2 layers grown on c -plane sapphire substrates by closed space sublimation

Aya Uruno; Yuji Takeda; Tomohiro Inoue; Masakazu Kobayashi

doi:10.1002/pssc.201510269

Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c -plane sapphire substrates by closed space sublimation

Aya Uruno, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Ag(Ga,Al)Te₂ layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe₂/AgGaTe₂ mixture or AgAlTe₂/Ga₂Te₃ mixture. The crystallographic property of Ag(Ga,Al)Te₂ layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te₂ layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga_1-x,Al_x)Te₂ was feasible by varying the source mole ratio Al/(Ga+Al). (

Original language	English
Pages (from-to)	413-416
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	7-9
DOIs	https://doi.org/10.1002/pssc.201510269
Publication status	Published - 2016 Jul 1

Keywords

Ag(Ga,Al)Te2
chalcopyrite
closed space sublimation

ASJC Scopus subject areas

Condensed Matter Physics

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Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c -plane sapphire substrates by closed space sublimation. / Uruno, Aya; Takeda, Yuji; Inoue, Tomohiro; Kobayashi, Masakazu.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 13, No. 7-9, 01.07.2016, p. 413-416.

Research output: Contribution to journal › Article › peer-review

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abstract = "Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al). (",

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N2 - Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al). (

AB - Ag(Ga,Al)Te2 layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2 mixture or AgAlTe2/Ga2Te3 mixture. The crystallographic property of Ag(Ga,Al)Te2 layers was analyzed by X-ray diffraction (XRD). XRD spectra of layers exhibited very strong 112 diffraction peaks regardless of the variation of the source material mixture. In addition to crystallographic characterizations, optical properties of the Ag(Ga,Al)Te2 layer were evaluated through transmittance measurements. The bandgap energy was decreased when the source mole ratio of Al to Ga was decreased. It was revealed that control regulation of x composition of Ag(Ga1-x,Alx)Te2 was feasible by varying the source mole ratio Al/(Ga+Al). (

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