# Crystallographic Characterization of AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> Grown by Closed-Space Sublimation

Aya Uruno, Ayaka Usui, Tomohiro Inoue, Yuji Takeda, Masakazu Kobayashi

Research output: Contribution to journalArticle

6 Citations (Scopus)

### Abstract

AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf> layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe<inf>2</inf> layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe<inf>2</inf> layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$\bar{1}$$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te<inf>2</inf> layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf>. These results showed that an alloy of AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf> had been grown successfully.

Original language English 3013-3017 5 Journal of Electronic Materials 44 9 https://doi.org/10.1007/s11664-015-3733-5 Published - 2015 Mar 31

### Fingerprint

Sublimation
sublimation
Aluminum Oxide
Diffraction
Sapphire
X rays
Poles
Substrates
Optical band gaps
sapphire
x ray diffraction
Energy gap
Optical properties
transmittance
poles
crystallinity
optical properties

### Keywords

• Ag(Ga,Al)Te<inf>2</inf>
• AgAlTe<inf>2</inf>
• AgGaTe<inf>2</inf>
• Chalcopyrite
• closed-space sublimation
• pole-figure measurements
• transmittance measurements

### ASJC Scopus subject areas

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials
• Condensed Matter Physics
• Materials Chemistry

### Cite this

Crystallographic Characterization of AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> Grown by Closed-Space Sublimation. / Uruno, Aya; Usui, Ayaka; Inoue, Tomohiro; Takeda, Yuji; Kobayashi, Masakazu.

In: Journal of Electronic Materials, Vol. 44, No. 9, 31.03.2015, p. 3013-3017.

Research output: Contribution to journalArticle

@article{ffaa4ebb99034e9db017456190e11e64,
title = "Crystallographic Characterization of AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 Grown by Closed-Space Sublimation",
abstract = "AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2 and AgAlTe2 layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe2 layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe2 layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$\bar{1}$$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te2 layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe2 and AgAlTe2. These results showed that an alloy of AgGaTe2 and AgAlTe2 had been grown successfully.",
keywords = "Ag(Ga,Al)Te<inf>2</inf>, AgAlTe<inf>2</inf>, AgGaTe<inf>2</inf>, Chalcopyrite, closed-space sublimation, pole-figure measurements, transmittance measurements",
author = "Aya Uruno and Ayaka Usui and Tomohiro Inoue and Yuji Takeda and Masakazu Kobayashi",
year = "2015",
month = "3",
day = "31",
doi = "10.1007/s11664-015-3733-5",
language = "English",
volume = "44",
pages = "3013--3017",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "9",

}

TY - JOUR

T1 - Crystallographic Characterization of AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 Grown by Closed-Space Sublimation

AU - Uruno, Aya

AU - Usui, Ayaka

AU - Inoue, Tomohiro

AU - Takeda, Yuji

AU - Kobayashi, Masakazu

PY - 2015/3/31

Y1 - 2015/3/31

N2 - AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2 and AgAlTe2 layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe2 layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe2 layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$\bar{1}$$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te2 layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe2 and AgAlTe2. These results showed that an alloy of AgGaTe2 and AgAlTe2 had been grown successfully.

AB - AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2 and AgAlTe2 layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe2 layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe2 layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$\bar{1}$$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te2 layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe2 and AgAlTe2. These results showed that an alloy of AgGaTe2 and AgAlTe2 had been grown successfully.

KW - Ag(Ga,Al)Te<inf>2</inf>

KW - AgAlTe<inf>2</inf>

KW - AgGaTe<inf>2</inf>

KW - Chalcopyrite

KW - closed-space sublimation

KW - pole-figure measurements

KW - transmittance measurements

UR - http://www.scopus.com/inward/record.url?scp=84940440067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940440067&partnerID=8YFLogxK

U2 - 10.1007/s11664-015-3733-5

DO - 10.1007/s11664-015-3733-5

M3 - Article

AN - SCOPUS:84940440067

VL - 44

SP - 3013

EP - 3017

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 9

ER -