Crystallographic Characterization of AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> Grown by Closed-Space Sublimation

Aya Uruno, Ayaka Usui, Tomohiro Inoue, Yuji Takeda, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf> layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe<inf>2</inf> layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe<inf>2</inf> layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$ \bar{1} $$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te<inf>2</inf> layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf>. These results showed that an alloy of AgGaTe<inf>2</inf> and AgAlTe<inf>2</inf> had been grown successfully.

    Original languageEnglish
    Pages (from-to)3013-3017
    Number of pages5
    JournalJournal of Electronic Materials
    Volume44
    Issue number9
    DOIs
    Publication statusPublished - 2015 Mar 31

    Fingerprint

    Sublimation
    sublimation
    Aluminum Oxide
    Diffraction
    Sapphire
    X rays
    Poles
    Substrates
    Optical band gaps
    sapphire
    x ray diffraction
    Energy gap
    Optical properties
    transmittance
    poles
    crystallinity
    optical properties

    Keywords

    • Ag(Ga,Al)Te<inf>2</inf>
    • AgAlTe<inf>2</inf>
    • AgGaTe<inf>2</inf>
    • Chalcopyrite
    • closed-space sublimation
    • pole-figure measurements
    • transmittance measurements

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Crystallographic Characterization of AgGaTe<inf>2</inf>, AgAlTe<inf>2</inf>, and Ag(Ga,Al)Te<inf>2</inf> Grown by Closed-Space Sublimation. / Uruno, Aya; Usui, Ayaka; Inoue, Tomohiro; Takeda, Yuji; Kobayashi, Masakazu.

    In: Journal of Electronic Materials, Vol. 44, No. 9, 31.03.2015, p. 3013-3017.

    Research output: Contribution to journalArticle

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    abstract = "AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2 layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2 and AgAlTe2 layers were then analyzed by x-ray diffraction (XRD). Very strong 112 diffraction peaks were observed in the XRD spectra of both layers, and it was clear the (112) orientation was predominant in both layers. The orientation and domain structure of the AgAlTe2 layer were carefully analyzed by XRD pole-figure measurement, and the effect of substrate surface atomic arrangement on the crystallinity of the AgAlTe2 layer was investigated. On the basis of the pole-figure image, six types of {112} domain were confirmed in the layer, and [$$ \bar{1} $$1¯ 10] in one domain was regarded as aligned with the sapphire’s a-axis when the layer was formed on the c-plane sapphire substrate surface. In addition to crystallographic characterization, the optical properties of the Ag(Ga,Al)Te2 layer were evaluated on the basis of transmittance measurements. The optical bandgap, derived from the transmittance spectrum, was approximately 2.0 eV. This value was between the bandgap values of AgGaTe2 and AgAlTe2. These results showed that an alloy of AgGaTe2 and AgAlTe2 had been grown successfully.",
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    AU - Usui, Ayaka

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    AU - Kobayashi, Masakazu

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