Abstract
The spontaneous polarization effect of ZnO on the thin film growth of pentacene, which is a typical π conjunction organic semiconductor, was investigated. Pentacene thin films were grown on polar ZnO surfaces by ultraslow organic film physical vapor deposition to obtain layer-by-layer growth. X-ray diffraction measurements revealed that pentacene molecules stand upright on polar ZnO surfaces, and that the films consist of two polymorphs, namely, the thin-film and bulk phases. The thin-film phases of pentacene were observed regardless of the polarity of the ZnO substrate at a thickness of less than six molecular layers. However, pentacene on a Zn-polar ZnO substrate gradually changed to the bulk phase unlike that on an O-polar ZnO substrate. Kelvin probe force microscopy measurements revealed that the surface potential of pentacene becomes more positive with increasing pentacene thickness at less than two molecular layers. The variation in the potential of pentacene on the Zn-polar ZnO substrate was larger than that of pentacene on the O-polar ZnO substrate. These findings indicate that the polarity of the semiconductor can control the growth and electronic state of the inorganic/organic semiconductor interface.
| Original language | English |
|---|---|
| Article number | 04CJ03 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 56 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2017 Apr 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Crystallographic polarity effect of ZnO on thin film growth of pentacene. / Nakamura, Tatsuru; Nagata, Takahiro; Hayakawa, Ryoma; Yoshimura, Takeshi; Oh, Seungjun; Hiroshiba, Nobuya; Chikyow, Toyohiro; Fujimura, Norifumi; Wakayama, Yutaka.
In: Japanese Journal of Applied Physics, Vol. 56, No. 4, 04CJ03, 01.04.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystallographic polarity effect of ZnO on thin film growth of pentacene
AU - Nakamura, Tatsuru
AU - Nagata, Takahiro
AU - Hayakawa, Ryoma
AU - Yoshimura, Takeshi
AU - Oh, Seungjun
AU - Hiroshiba, Nobuya
AU - Chikyow, Toyohiro
AU - Fujimura, Norifumi
AU - Wakayama, Yutaka
PY - 2017/4/1
Y1 - 2017/4/1
N2 - The spontaneous polarization effect of ZnO on the thin film growth of pentacene, which is a typical π conjunction organic semiconductor, was investigated. Pentacene thin films were grown on polar ZnO surfaces by ultraslow organic film physical vapor deposition to obtain layer-by-layer growth. X-ray diffraction measurements revealed that pentacene molecules stand upright on polar ZnO surfaces, and that the films consist of two polymorphs, namely, the thin-film and bulk phases. The thin-film phases of pentacene were observed regardless of the polarity of the ZnO substrate at a thickness of less than six molecular layers. However, pentacene on a Zn-polar ZnO substrate gradually changed to the bulk phase unlike that on an O-polar ZnO substrate. Kelvin probe force microscopy measurements revealed that the surface potential of pentacene becomes more positive with increasing pentacene thickness at less than two molecular layers. The variation in the potential of pentacene on the Zn-polar ZnO substrate was larger than that of pentacene on the O-polar ZnO substrate. These findings indicate that the polarity of the semiconductor can control the growth and electronic state of the inorganic/organic semiconductor interface.
AB - The spontaneous polarization effect of ZnO on the thin film growth of pentacene, which is a typical π conjunction organic semiconductor, was investigated. Pentacene thin films were grown on polar ZnO surfaces by ultraslow organic film physical vapor deposition to obtain layer-by-layer growth. X-ray diffraction measurements revealed that pentacene molecules stand upright on polar ZnO surfaces, and that the films consist of two polymorphs, namely, the thin-film and bulk phases. The thin-film phases of pentacene were observed regardless of the polarity of the ZnO substrate at a thickness of less than six molecular layers. However, pentacene on a Zn-polar ZnO substrate gradually changed to the bulk phase unlike that on an O-polar ZnO substrate. Kelvin probe force microscopy measurements revealed that the surface potential of pentacene becomes more positive with increasing pentacene thickness at less than two molecular layers. The variation in the potential of pentacene on the Zn-polar ZnO substrate was larger than that of pentacene on the O-polar ZnO substrate. These findings indicate that the polarity of the semiconductor can control the growth and electronic state of the inorganic/organic semiconductor interface.
UR - http://www.scopus.com/inward/record.url?scp=85017186691&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85017186691&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.04CJ03
DO - 10.7567/JJAP.56.04CJ03
M3 - Article
AN - SCOPUS:85017186691
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4
M1 - 04CJ03
ER -