C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

S. Kobayashi, T. Takenobu, S. Mori, A. Fujiwara, Y. Iwasa

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We report performance of C60 thin-film field-effect transistors and characterizations of C60 thin-films on SiO2 substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios > 108 and field-effect mobility in the range of 0.5-0.3 cm2/Vs. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C60 thin-films. The grain size of C60 thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature.

Original languageEnglish
Pages (from-to)371-375
Number of pages5
JournalScience and Technology of Advanced Materials
Volume4
Issue number4
DOIs
Publication statusPublished - 2003 Jul 1
Externally publishedYes

Fingerprint

Molecular beams
Thin film transistors
Thin films
Substrates
Field effect transistors
Photocurrents
Vacuum
Temperature
Air

Keywords

  • C
  • Field-effect transistor
  • Mobility
  • Thin-film

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition. / Kobayashi, S.; Takenobu, T.; Mori, S.; Fujiwara, A.; Iwasa, Y.

In: Science and Technology of Advanced Materials, Vol. 4, No. 4, 01.07.2003, p. 371-375.

Research output: Contribution to journalArticle

Kobayashi, S. ; Takenobu, T. ; Mori, S. ; Fujiwara, A. ; Iwasa, Y. / C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition. In: Science and Technology of Advanced Materials. 2003 ; Vol. 4, No. 4. pp. 371-375.
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