Cu-Cu direct bonding by introducing Au intermediate layer

Hirokazu Noma, Takumi Kamibayashi, Hiroyuki Kuwae, Naoya Suzuki, Toshihisa Nonaka, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages70
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 16 → 2017 May 18

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/16 → 17/5/18

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Noma, H., Kamibayashi, T., Kuwae, H., Suzuki, N., Nonaka, T., Shoji, S., & Mizuno, J. (2017). Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 70). [7947466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947466

Cu-Cu direct bonding by introducing Au intermediate layer. / Noma, Hirokazu; Kamibayashi, Takumi; Kuwae, Hiroyuki; Suzuki, Naoya; Nonaka, Toshihisa; Shoji, Shuichi; Mizuno, Jun.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 70 7947466.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noma, H, Kamibayashi, T, Kuwae, H, Suzuki, N, Nonaka, T, Shoji, S & Mizuno, J 2017, Cu-Cu direct bonding by introducing Au intermediate layer. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947466, Institute of Electrical and Electronics Engineers Inc., pp. 70, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947466
Noma H, Kamibayashi T, Kuwae H, Suzuki N, Nonaka T, Shoji S et al. Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 70. 7947466 https://doi.org/10.23919/LTB-3D.2017.7947466
Noma, Hirokazu ; Kamibayashi, Takumi ; Kuwae, Hiroyuki ; Suzuki, Naoya ; Nonaka, Toshihisa ; Shoji, Shuichi ; Mizuno, Jun. / Cu-Cu direct bonding by introducing Au intermediate layer. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 70
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