Cu-Cu direct bonding by introducing Au intermediate layer

Hirokazu Noma; Takumi Kamibayashi; Hiroyuki Kuwae; Naoya Suzuki; Toshihisa Nonaka; Shuichi Shoji; Jun Mizuno

doi:10.23919/LTB-3D.2017.7947466

Cu-Cu direct bonding by introducing Au intermediate layer

Hirokazu Noma, Takumi Kamibayashi, Hiroyuki Kuwae, Naoya Suzuki, Toshihisa Nonaka, Shuichi Shoji, Jun Mizuno

Research Organization for Nano & Life Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

Original language	English
Title of host publication	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	70
Number of pages	1
ISBN (Electronic)	9784904743034
DOIs	https://doi.org/10.23919/LTB-3D.2017.7947466
Publication status	Published - 2017 Jun 13
Event	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan Duration: 2017 May 16 → 2017 May 18

Other

Other	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Country	Japan
City	Tokyo
Period	17/5/16 → 17/5/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

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Noma, H., Kamibayashi, T., Kuwae, H., Suzuki, N., Nonaka, T., Shoji, S., & Mizuno, J. (2017). Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 70). [7947466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947466

Cu-Cu direct bonding by introducing Au intermediate layer. / Noma, Hirokazu; Kamibayashi, Takumi; Kuwae, Hiroyuki; Suzuki, Naoya; Nonaka, Toshihisa; Shoji, Shuichi ; Mizuno, Jun.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 70 7947466.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noma, H, Kamibayashi, T, Kuwae, H, Suzuki, N, Nonaka, T, Shoji, S & Mizuno, J 2017, Cu-Cu direct bonding by introducing Au intermediate layer. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947466, Institute of Electrical and Electronics Engineers Inc., pp. 70, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947466

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abstract = "Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.",

author = "Hirokazu Noma and Takumi Kamibayashi and Hiroyuki Kuwae and Naoya Suzuki and Toshihisa Nonaka and Shuichi Shoji and Jun Mizuno",

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AU - Noma, Hirokazu

AU - Kamibayashi, Takumi

AU - Kuwae, Hiroyuki

AU - Suzuki, Naoya

AU - Nonaka, Toshihisa

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2017/6/13

Y1 - 2017/6/13

N2 - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

AB - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

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BT - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Y2 - 16 May 2017 through 18 May 2017

ER -

Cu-Cu direct bonding by introducing Au intermediate layer

Abstract

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ASJC Scopus subject areas

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