Cu-Cu direct bonding by introducing Au intermediate layer

Hirokazu Noma, Takumi Kamibayashi, Hiroyuki Kuwae, Naoya Suzuki, Toshihisa Nonaka, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages70
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

Fingerprint

Gold
Fans

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Noma, H., Kamibayashi, T., Kuwae, H., Suzuki, N., Nonaka, T., Shoji, S., & Mizuno, J. (2017). Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 70). [7947466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947466

Cu-Cu direct bonding by introducing Au intermediate layer. / Noma, Hirokazu; Kamibayashi, Takumi; Kuwae, Hiroyuki; Suzuki, Naoya; Nonaka, Toshihisa; Shoji, Shuichi; Mizuno, Jun.

Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 70 7947466.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Noma, H, Kamibayashi, T, Kuwae, H, Suzuki, N, Nonaka, T, Shoji, S & Mizuno, J 2017, Cu-Cu direct bonding by introducing Au intermediate layer. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947466, Institute of Electrical and Electronics Engineers Inc., pp. 70, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947466
Noma H, Kamibayashi T, Kuwae H, Suzuki N, Nonaka T, Shoji S et al. Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 70. 7947466 https://doi.org/10.23919/LTB-3D.2017.7947466
Noma, Hirokazu ; Kamibayashi, Takumi ; Kuwae, Hiroyuki ; Suzuki, Naoya ; Nonaka, Toshihisa ; Shoji, Shuichi ; Mizuno, Jun. / Cu-Cu direct bonding by introducing Au intermediate layer. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 70
@inproceedings{66020349d0f84bab8510bbdeb52b3838,
title = "Cu-Cu direct bonding by introducing Au intermediate layer",
abstract = "Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.",
author = "Hirokazu Noma and Takumi Kamibayashi and Hiroyuki Kuwae and Naoya Suzuki and Toshihisa Nonaka and Shuichi Shoji and Jun Mizuno",
year = "2017",
month = "6",
day = "13",
doi = "10.23919/LTB-3D.2017.7947466",
language = "English",
pages = "70",
booktitle = "Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Cu-Cu direct bonding by introducing Au intermediate layer

AU - Noma, Hirokazu

AU - Kamibayashi, Takumi

AU - Kuwae, Hiroyuki

AU - Suzuki, Naoya

AU - Nonaka, Toshihisa

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2017/6/13

Y1 - 2017/6/13

N2 - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

AB - Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

UR - http://www.scopus.com/inward/record.url?scp=85022177982&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022177982&partnerID=8YFLogxK

U2 - 10.23919/LTB-3D.2017.7947466

DO - 10.23919/LTB-3D.2017.7947466

M3 - Conference contribution

SP - 70

BT - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -