Cu-Cu direct bonding by introducing Au intermediate layer

Hirokazu Noma, Takumi Kamibayashi, Hiroyuki Kuwae, Naoya Suzuki, Toshihisa Nonaka, Shuichi Shoji, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.

Original languageEnglish
Title of host publicationProceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages70
Number of pages1
ISBN (Electronic)9784904743034
DOIs
Publication statusPublished - 2017 Jun 13
Event5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan
Duration: 2017 May 162017 May 18

Other

Other5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
CountryJapan
CityTokyo
Period17/5/1617/5/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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  • Cite this

    Noma, H., Kamibayashi, T., Kuwae, H., Suzuki, N., Nonaka, T., Shoji, S., & Mizuno, J. (2017). Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 70). [7947466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947466