Abstract
Cu-Cu direct bonding under help of direct immersion gold (DIG) for multi-die fan-out wafer level package was demonstrated. Cu-Cu direct bonding is a critical technology for high-frequency applications. To solve challenges of conventional methods, the DIG was used. As a result, a cohesion failure was obtained in shear test.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 70 |
| Number of pages | 1 |
| ISBN (Electronic) | 9784904743034 |
| DOIs | |
| Publication status | Published - 2017 Jun 13 |
| Event | 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan Duration: 2017 May 16 → 2017 May 18 |
Other
| Other | 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 |
|---|---|
| Country | Japan |
| City | Tokyo |
| Period | 17/5/16 → 17/5/18 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
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Cite this
Noma, H., Kamibayashi, T., Kuwae, H., Suzuki, N., Nonaka, T., Shoji, S., & Mizuno, J. (2017). Cu-Cu direct bonding by introducing Au intermediate layer. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 70). [7947466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947466