Abstract
We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
| Original language | English |
|---|---|
| Pages (from-to) | 3730-3733 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 6 SUPPL. B |
| Publication status | Published - 1996 Jun |
| Externally published | Yes |
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Keywords
- 3-D island
- Cu
- DAS structure
- Quasi-layer-by-layer
- Si(111)
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
Cite this
Cu film growth on a Si(111) surface studied by scanning tunneling microscopy. / Tomimatsu, Satoshi; Hasegawa, Tsuyoshi; Kohno, Makiko; Hosoki, Shigeyuki.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 6 SUPPL. B, 06.1996, p. 3730-3733.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cu film growth on a Si(111) surface studied by scanning tunneling microscopy
AU - Tomimatsu, Satoshi
AU - Hasegawa, Tsuyoshi
AU - Kohno, Makiko
AU - Hosoki, Shigeyuki
PY - 1996/6
Y1 - 1996/6
N2 - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
AB - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
KW - 3-D island
KW - Cu
KW - DAS structure
KW - Quasi-layer-by-layer
KW - Si(111)
UR - http://www.scopus.com/inward/record.url?scp=0030172848&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030172848&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030172848
VL - 35
SP - 3730
EP - 3733
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 SUPPL. B
ER -