Abstract
We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
| Original language | English |
|---|---|
| Pages (from-to) | 3730-3733 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 6 SUPPL. B |
| Publication status | Published - 1996 Jun |
| Externally published | Yes |
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Keywords
- 3-D island
- Cu
- DAS structure
- Quasi-layer-by-layer
- Si(111)
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
Cite this
Tomimatsu, S., Hasegawa, T., Kohno, M., & Hosoki, S. (1996). Cu film growth on a Si(111) surface studied by scanning tunneling microscopy. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(6 SUPPL. B), 3730-3733.