Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Satoshi Tomimatsu; Tsuyoshi Hasegawa; Makiko Kohno; Shigeyuki Hosoki

Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Satoshi Tomimatsu, Tsuyoshi Hasegawa, Makiko Kohno, Shigeyuki Hosoki

Research output: Contribution to journal › Article › peer-review

Abstract

We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

Original language	English
Pages (from-to)	3730-3733
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	6 SUPPL. B
Publication status	Published - 1996 Jun 1
Externally published	Yes

Keywords

3-D island
Cu
DAS structure
Quasi-layer-by-layer
Si(111)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Cu film growth on a Si(111) surface studied by scanning tunneling microscopy. / Tomimatsu, Satoshi; Hasegawa, Tsuyoshi; Kohno, Makiko; Hosoki, Shigeyuki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 6 SUPPL. B, 01.06.1996, p. 3730-3733.

Research output: Contribution to journal › Article › peer-review

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KW - DAS structure

KW - Quasi-layer-by-layer

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