Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Satoshi Tomimatsu; Tsuyoshi Hasegawa; Makiko Kohno; Shigeyuki Hosoki

doi:10.1143/jjap.35.3730

Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Satoshi Tomimatsu^*, Tsuyoshi Hasegawa, Makiko Kohno, Shigeyuki Hosoki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

Original language	English
Pages (from-to)	3730-3733
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	6 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.3730
Publication status	Published - 1996 Jun
Externally published	Yes

Keywords

3-D island
Cu
DAS structure
Quasi-layer-by-layer
Si(111)

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.35.3730

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title = "Cu film growth on a Si(111) surface studied by scanning tunneling microscopy",

abstract = "We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.",

keywords = "3-D island, Cu, DAS structure, Quasi-layer-by-layer, Si(111)",

author = "Satoshi Tomimatsu and Tsuyoshi Hasegawa and Makiko Kohno and Shigeyuki Hosoki",

year = "1996",

month = jun,

doi = "10.1143/jjap.35.3730",

language = "English",

volume = "35",

pages = "3730--3733",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 SUPPL. B",

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TY - JOUR

T1 - Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

AU - Tomimatsu, Satoshi

AU - Hasegawa, Tsuyoshi

AU - Kohno, Makiko

AU - Hosoki, Shigeyuki

PY - 1996/6

Y1 - 1996/6

N2 - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

AB - We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

KW - 3-D island

KW - Cu

KW - DAS structure

KW - Quasi-layer-by-layer

KW - Si(111)

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DO - 10.1143/jjap.35.3730

M3 - Article

AN - SCOPUS:0030172848

VL - 35

SP - 3730

EP - 3733

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 SUPPL. B

ER -

Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Abstract

Keywords

ASJC Scopus subject areas

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