Cu film growth on a Si(111) surface studied by scanning tunneling microscopy

Satoshi Tomimatsu, Tsuyoshi Hasegawa, Makiko Kohno, Shigeyuki Hosoki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We observed a change in growth mode of Cu. while dynamically observing Cu film growth on a Si(111)-7 ×7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7×7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

Original languageEnglish
Pages (from-to)3730-3733
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number6 SUPPL. B
Publication statusPublished - 1996 Jun
Externally publishedYes

Fingerprint

Scanning tunneling microscopy
Film growth
scanning tunneling microscopy
adatoms
Atoms
room temperature
Temperature

Keywords

  • 3-D island
  • Cu
  • DAS structure
  • Quasi-layer-by-layer
  • Si(111)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Cu film growth on a Si(111) surface studied by scanning tunneling microscopy. / Tomimatsu, Satoshi; Hasegawa, Tsuyoshi; Kohno, Makiko; Hosoki, Shigeyuki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 6 SUPPL. B, 06.1996, p. 3730-3733.

Research output: Contribution to journalArticle

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