Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno*, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, H. Imai, S. Fujieda, T. Ichihashi, T. Hasegawa, M. Aono

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO2-Ta 2O5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu+ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta2O5 switch without annealing. The switch with the SiO2-Ta2O5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.

Original languageEnglish
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages395-399
Number of pages5
DOIs
Publication statusPublished - 2009 Nov 12
Externally publishedYes
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 2009 Apr 262009 Apr 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
Country/TerritoryCanada
CityMontreal, QC
Period09/4/2609/4/30

Keywords

  • BEOL process
  • Nonvolatile switch
  • Thermal stability

ASJC Scopus subject areas

  • Engineering(all)

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