Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes

N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, H. Imai, S. Fujieda, T. Ichihashi, Tsuyoshi Hasegawa, M. Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

For stability against the thermal budget of the CMOS BEOL process, we developed a new solid-electrolyte switch that uses a SiO2-Ta 2O5 composite as the electrolyte. This switch has high thermal stability because thermal diffusion of Cu+ ions is suppressed in the composite. Moreover, its switching characteristics after thermal annealing are similar to those of a Ta2O5 switch without annealing. The switch with the SiO2-Ta2O5 composite electrolyte has good ON-state durability against DC current stress; its durability is comparable to that of a single via in interconnects. The switch can be implemented in the local interconnection layers of LSIs.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages395-399
Number of pages5
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 2009 Apr 262009 Apr 30

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period09/4/2609/4/30

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Keywords

  • BEOL process
  • Nonvolatile switch
  • Thermal stability

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Banno, N., Sakamoto, T., Hada, H., Kasai, N., Iguchi, N., Imai, H., Fujieda, S., Ichihashi, T., Hasegawa, T., & Aono, M. (2009). Cu-ion diffusivity in SiO2-Ta2O5 solid electrolyte and its impact on the yield of resistance switching after BEOL processes. In IEEE International Reliability Physics Symposium Proceedings (pp. 395-399). [5173285] https://doi.org/10.1109/IRPS.2009.5173285