High-performance metal-insulator-semiconductor field-effect transistors (MISFET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface states. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||9 A/B|
|Publication status||Published - 2000 Sep 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)