Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Kazuo Tsugawa, Sadanori Yamanaka, Daisuke Takeuchi, Hideyo Okushi, Hiroshi Kawarada

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32 Citations (Scopus)

Abstract

High-performance metal-insulator-semiconductor field-effect transistors (MISFET) on hydrogen-terminated homoepitaxial diamond films are demonstrated. The gate insulator is evaporated CaF2 which does not cause interface states. This is the first study of a CaF2/diamond MISFET fabricated by a self-aligned gate fabrication process by which the gate length and the source gate spacing are effectively reduced. The maximum transconductance is 86 mS/mm, which is the highest value in diamond MISFETs at present.

Original languageEnglish
Pages (from-to)L908-L910
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume39
Issue number9 A/B
Publication statusPublished - 2000 Sep 15

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Umezawa, H., Taniuchi, H., Arima, T., Tachiki, M., Tsugawa, K., Yamanaka, S., Takeuchi, D., Okushi, H., & Kawarada, H. (2000). Cu/CaF2/diamond metal-insulator-semiconductor field-effect transistor utilizing self-aligned gate fabrication process. Japanese Journal of Applied Physics, Part 2: Letters, 39(9 A/B), L908-L910.