Current-confinement structure and extremely high current density in organic light-emitting transistors

Kosuke Sawabe, Masaki Imakawa, Masaki Nakano, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticle

    57 Citations (Scopus)

    Abstract

    Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

    Original languageEnglish
    Pages (from-to)6141-6146
    Number of pages6
    JournalAdvanced Materials
    Volume24
    Issue number46
    DOIs
    Publication statusPublished - 2012 Dec 4

    Keywords

    • ambipolar transistors
    • light-emitting transistors
    • organic transistors
    • single-crystal transistors

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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  • Cite this

    Sawabe, K., Imakawa, M., Nakano, M., Yamao, T., Hotta, S., Iwasa, Y., & Takenobu, T. (2012). Current-confinement structure and extremely high current density in organic light-emitting transistors. Advanced Materials, 24(46), 6141-6146. https://doi.org/10.1002/adma.201202252