Current-confinement structure and extremely high current density in organic light-emitting transistors

Kosuke Sawabe; Masaki Imakawa; Masaki Nakano; Takeshi Yamao; Shu Hotta; Yoshihiro Iwasa; Taishi Takenobu

doi:10.1002/adma.201202252

Current-confinement structure and extremely high current density in organic light-emitting transistors

Kosuke Sawabe, Masaki Imakawa, Masaki Nakano, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm^-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

Original language	English
Pages (from-to)	6141-6146
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	46
DOIs	https://doi.org/10.1002/adma.201202252
Publication status	Published - 2012 Dec 4

Keywords

ambipolar transistors
light-emitting transistors
organic transistors
single-crystal transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201202252

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@article{8112c0d429e6438282ba9377f7c91c4f,

title = "Current-confinement structure and extremely high current density in organic light-emitting transistors",

abstract = "Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.",

keywords = "ambipolar transistors, light-emitting transistors, organic transistors, single-crystal transistors",

author = "Kosuke Sawabe and Masaki Imakawa and Masaki Nakano and Takeshi Yamao and Shu Hotta and Yoshihiro Iwasa and Taishi Takenobu",

year = "2012",

month = dec,

day = "4",

doi = "10.1002/adma.201202252",

language = "English",

volume = "24",

pages = "6141--6146",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "46",

}

TY - JOUR

T1 - Current-confinement structure and extremely high current density in organic light-emitting transistors

AU - Sawabe, Kosuke

AU - Imakawa, Masaki

AU - Nakano, Masaki

AU - Yamao, Takeshi

AU - Hotta, Shu

AU - Iwasa, Yoshihiro

AU - Takenobu, Taishi

PY - 2012/12/4

Y1 - 2012/12/4

N2 - Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

AB - Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

KW - ambipolar transistors

KW - light-emitting transistors

KW - organic transistors

KW - single-crystal transistors

UR - http://www.scopus.com/inward/record.url?scp=84870499147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870499147&partnerID=8YFLogxK

U2 - 10.1002/adma.201202252

DO - 10.1002/adma.201202252

M3 - Article

C2 - 22961877

AN - SCOPUS:84870499147

SN - 0935-9648

VL - 24

SP - 6141

EP - 6146

JO - Advanced Materials

JF - Advanced Materials

IS - 46

ER -

Current-confinement structure and extremely high current density in organic light-emitting transistors

Abstract

Keywords

ASJC Scopus subject areas

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