Current-confinement structure and extremely high current density in organic light-emitting transistors

Kosuke Sawabe, Masaki Imakawa, Masaki Nakano, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticle

    52 Citations (Scopus)

    Abstract

    Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm-2, which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.

    Original languageEnglish
    Pages (from-to)6141-6146
    Number of pages6
    JournalAdvanced Materials
    Volume24
    Issue number46
    DOIs
    Publication statusPublished - 2012 Dec 4

    Fingerprint

    Transistors
    Current density
    Electron injection
    Organic light emitting diodes (OLED)
    Buffer layers
    Luminance
    Etching
    Single crystals
    Lasers

    Keywords

    • ambipolar transistors
    • light-emitting transistors
    • organic transistors
    • single-crystal transistors

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

    Cite this

    Sawabe, K., Imakawa, M., Nakano, M., Yamao, T., Hotta, S., Iwasa, Y., & Takenobu, T. (2012). Current-confinement structure and extremely high current density in organic light-emitting transistors. Advanced Materials, 24(46), 6141-6146. https://doi.org/10.1002/adma.201202252

    Current-confinement structure and extremely high current density in organic light-emitting transistors. / Sawabe, Kosuke; Imakawa, Masaki; Nakano, Masaki; Yamao, Takeshi; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi.

    In: Advanced Materials, Vol. 24, No. 46, 04.12.2012, p. 6141-6146.

    Research output: Contribution to journalArticle

    Sawabe, K, Imakawa, M, Nakano, M, Yamao, T, Hotta, S, Iwasa, Y & Takenobu, T 2012, 'Current-confinement structure and extremely high current density in organic light-emitting transistors', Advanced Materials, vol. 24, no. 46, pp. 6141-6146. https://doi.org/10.1002/adma.201202252
    Sawabe, Kosuke ; Imakawa, Masaki ; Nakano, Masaki ; Yamao, Takeshi ; Hotta, Shu ; Iwasa, Yoshihiro ; Takenobu, Taishi. / Current-confinement structure and extremely high current density in organic light-emitting transistors. In: Advanced Materials. 2012 ; Vol. 24, No. 46. pp. 6141-6146.
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