Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction

D. Chiba, Y. Sato, Tomohiro Kita, F. Matsukura, H. Ohno

Research output: Contribution to journalArticle

131 Citations (Scopus)

Abstract

The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.

Original languageEnglish
Article number216602
JournalPhysical Review Letters
Volume93
Issue number21
DOIs
Publication statusPublished - 2004 Nov 19
Externally publishedYes

Fingerprint

tunnel junctions
magnetization
magnetic storage
torque
critical current
current density
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction. / Chiba, D.; Sato, Y.; Kita, Tomohiro; Matsukura, F.; Ohno, H.

In: Physical Review Letters, Vol. 93, No. 21, 216602, 19.11.2004.

Research output: Contribution to journalArticle

@article{bae9f9aec7b14f5e829a73753230e6ff,
title = "Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction",
abstract = "The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.",
author = "D. Chiba and Y. Sato and Tomohiro Kita and F. Matsukura and H. Ohno",
year = "2004",
month = "11",
day = "19",
doi = "10.1103/PhysRevLett.93.216602",
language = "English",
volume = "93",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "21",

}

TY - JOUR

T1 - Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga, Mn)As/GaAs/(Ga, Mn)As tunnel junction

AU - Chiba, D.

AU - Sato, Y.

AU - Kita, Tomohiro

AU - Matsukura, F.

AU - Ohno, H.

PY - 2004/11/19

Y1 - 2004/11/19

N2 - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.

AB - The current-driven magnetization reversal was demonstrated in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction at 30K. It was observed that magnetization switching occurred at low critical current densities of 1.1-2.2 ×105 A/cm2. It was found that the magnetization reversal was due to the spin-transfer torque exerted from the spin-polarized current. It was also found that current-induced reversal was advantageous for ultrahigh density magnetic memories over magnetization reversal using magnetic fields.

UR - http://www.scopus.com/inward/record.url?scp=37649027698&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37649027698&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.93.216602

DO - 10.1103/PhysRevLett.93.216602

M3 - Article

AN - SCOPUS:37649027698

VL - 93

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 21

M1 - 216602

ER -