Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

T. Kamioka, H. Imai, Y. Kamakura, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, T. Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

Original languageEnglish
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages17.2.1-17.2.4
DOIs
Publication statusPublished - 2012 Dec 1
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: 2012 Dec 102012 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/12/1012/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kamioka, T., Imai, H., Kamakura, Y., Ohmori, K., Shiraishi, K., Niwa, M., Yamada, K., & Watanabe, T. (2012). Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 17.2.1-17.2.4). [6479058] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479058