Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation

T. Kamioka, H. Imai, Y. Kamakura, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The impact of current fluctuation due to discreteness in carrier numbers on high-frequency noise amplitudes is numerically investigated, focusing on the comparison to the impact of a single trapped charge in the oxide layer for gate-all-around nanowire structures. The variation in the amount of the charge transporting through the channel within a single clock cycle is estimated. The transported charge variation due to the current fluctuation clearly shows the universality with respect to the total amount of the transported charge. It concludes that the current fluctuation becomes a dominant noise source over 100 GHz range.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA
Duration: 2012 Dec 102012 Dec 13

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CitySan Francisco, CA
Period12/12/1012/12/13

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Kamioka, T., Imai, H., Kamakura, Y., Ohmori, K., Shiraishi, K., Niwa, M., Yamada, K., & Watanabe, T. (2012). Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation. In Technical Digest - International Electron Devices Meeting, IEDM [6479058] https://doi.org/10.1109/IEDM.2012.6479058