Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer

Y. Kuroki; H. Sakakibara; H. Ando; S. Kawai; T. Hajiri; K. Ueda; H. Asano

doi:10.1109/INTMAG.2015.7156580

Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer

Y. Kuroki, H. Sakakibara, H. Ando, S. Kawai, T. Hajiri, K. Ueda, H. Asano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recently, current-induced spin transfer torque is attracting interest because it affects not only a FM but also an AFM [1, 2]. Furthermore, the critical current for AFM switching is more than 10^-2 times smaller than typical value for a FM [1]. Therefore, FM/AFM bilayers containing half-metallic FMs are desirable for studying current-induced magnetization switching and spin torque in AFM materials. Up to now, we focused on antiperovskite nitride [3, 4] because there are many combinations of elements that form the antiperovskite nitride such a AFM materials and half-metallic FM. Anti-perovskite FM nitride Co₃FeN is predicted that it has high negative spin polarization [3, 4]. Anti-perovskite AFM nitride Mn₃GaN exhibits many interesting properties, such as piezomagnetic [5]. For Mn₃GaN/Co₃FeN bilayer, we expect application to the new devices controlling magnetic moments of Mn₃GaN by spin transfer torque. In this study, we investigated current-induced magnetization switching in Mn₃GaN/Co₃FeN epitaxial exchange-coupled bilayers by employing AMR effect. We shall discuss spin transfer torque in antiferromagnetic Mn₃ GaN.

Original language	English
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7156580
Publication status	Published - 2015 Jul 14
Externally published	Yes
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: 2015 May 11 → 2015 May 15

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	15/5/11 → 15/5/15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2015.7156580

Cite this

Kuroki, Y., Sakakibara, H., Ando, H., Kawai, S., Hajiri, T., Ueda, K., & Asano, H. (2015). Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer. In 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156580] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156580

Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer. / Kuroki, Y.; Sakakibara, H.; Ando, H. et al.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156580 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuroki, Y, Sakakibara, H, Ando, H, Kawai, S, Hajiri, T, Ueda, K & Asano, H 2015, Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156580, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 15/5/11. https://doi.org/10.1109/INTMAG.2015.7156580

Kuroki Y, Sakakibara H, Ando H, Kawai S, Hajiri T, Ueda K et al. Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer. In 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156580. (2015 IEEE International Magnetics Conference, INTERMAG 2015). doi: 10.1109/INTMAG.2015.7156580

@inproceedings{04bf17967e3240c7951dcd34df801a50,

title = "Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer",

abstract = "Recently, current-induced spin transfer torque is attracting interest because it affects not only a FM but also an AFM [1, 2]. Furthermore, the critical current for AFM switching is more than 10-2 times smaller than typical value for a FM [1]. Therefore, FM/AFM bilayers containing half-metallic FMs are desirable for studying current-induced magnetization switching and spin torque in AFM materials. Up to now, we focused on antiperovskite nitride [3, 4] because there are many combinations of elements that form the antiperovskite nitride such a AFM materials and half-metallic FM. Anti-perovskite FM nitride Co3FeN is predicted that it has high negative spin polarization [3, 4]. Anti-perovskite AFM nitride Mn3GaN exhibits many interesting properties, such as piezomagnetic [5]. For Mn3GaN/Co3FeN bilayer, we expect application to the new devices controlling magnetic moments of Mn3GaN by spin transfer torque. In this study, we investigated current-induced magnetization switching in Mn3GaN/Co3FeN epitaxial exchange-coupled bilayers by employing AMR effect. We shall discuss spin transfer torque in antiferromagnetic Mn3 GaN.",

author = "Y. Kuroki and H. Sakakibara and H. Ando and S. Kawai and T. Hajiri and K. Ueda and H. Asano",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 IEEE International Magnetics Conference, INTERMAG 2015 ; Conference date: 11-05-2015 Through 15-05-2015",

year = "2015",

month = jul,

day = "14",

doi = "10.1109/INTMAG.2015.7156580",

language = "English",

series = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",

}

TY - GEN

T1 - Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer

AU - Kuroki, Y.

AU - Sakakibara, H.

AU - Ando, H.

AU - Kawai, S.

AU - Hajiri, T.

AU - Ueda, K.

AU - Asano, H.

PY - 2015/7/14

Y1 - 2015/7/14

N2 - Recently, current-induced spin transfer torque is attracting interest because it affects not only a FM but also an AFM [1, 2]. Furthermore, the critical current for AFM switching is more than 10-2 times smaller than typical value for a FM [1]. Therefore, FM/AFM bilayers containing half-metallic FMs are desirable for studying current-induced magnetization switching and spin torque in AFM materials. Up to now, we focused on antiperovskite nitride [3, 4] because there are many combinations of elements that form the antiperovskite nitride such a AFM materials and half-metallic FM. Anti-perovskite FM nitride Co3FeN is predicted that it has high negative spin polarization [3, 4]. Anti-perovskite AFM nitride Mn3GaN exhibits many interesting properties, such as piezomagnetic [5]. For Mn3GaN/Co3FeN bilayer, we expect application to the new devices controlling magnetic moments of Mn3GaN by spin transfer torque. In this study, we investigated current-induced magnetization switching in Mn3GaN/Co3FeN epitaxial exchange-coupled bilayers by employing AMR effect. We shall discuss spin transfer torque in antiferromagnetic Mn3 GaN.

AB - Recently, current-induced spin transfer torque is attracting interest because it affects not only a FM but also an AFM [1, 2]. Furthermore, the critical current for AFM switching is more than 10-2 times smaller than typical value for a FM [1]. Therefore, FM/AFM bilayers containing half-metallic FMs are desirable for studying current-induced magnetization switching and spin torque in AFM materials. Up to now, we focused on antiperovskite nitride [3, 4] because there are many combinations of elements that form the antiperovskite nitride such a AFM materials and half-metallic FM. Anti-perovskite FM nitride Co3FeN is predicted that it has high negative spin polarization [3, 4]. Anti-perovskite AFM nitride Mn3GaN exhibits many interesting properties, such as piezomagnetic [5]. For Mn3GaN/Co3FeN bilayer, we expect application to the new devices controlling magnetic moments of Mn3GaN by spin transfer torque. In this study, we investigated current-induced magnetization switching in Mn3GaN/Co3FeN epitaxial exchange-coupled bilayers by employing AMR effect. We shall discuss spin transfer torque in antiferromagnetic Mn3 GaN.

UR - http://www.scopus.com/inward/record.url?scp=84942446841&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942446841&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7156580

DO - 10.1109/INTMAG.2015.7156580

M3 - Conference contribution

AN - SCOPUS:84942446841

T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015

Y2 - 11 May 2015 through 15 May 2015

ER -

Current induced magnetization switching in an antiperovskite nitride exchange-coupled bilayer

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this