Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

p-InGaNn-GaN vertical conducting diodes have been grown on n+ -SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8-4.0 V at a forward current density of 100 A cm2 with an on-state resistance of ∼1.3 mω cm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51 mω cm2, leading to the figure-of-merit, (VB) 2 Ron, of 62 MW cm2.

Original languageEnglish
Article number233505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number23
DOIs
Publication statusPublished - 2005
Externally publishedYes

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diodes
electrical faults
conduction
electric potential
vapor phase epitaxy
figure of merit
low pressure
current density
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 87, No. 23, 233505, 2005, p. 1-3.

Research output: Contribution to journalArticle

Nishikawa, Atsushi ; Kumakura, Kazuhide ; Akasaka, Tetsuya ; Makimoto, Toshiki. / Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates. In: Applied Physics Letters. 2005 ; Vol. 87, No. 23. pp. 1-3.
@article{be80386eb3f645aaa304cc95bcd05ded,
title = "Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates",
abstract = "p-InGaNn-GaN vertical conducting diodes have been grown on n+ -SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8-4.0 V at a forward current density of 100 A cm2 with an on-state resistance of ∼1.3 mω cm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51 mω cm2, leading to the figure-of-merit, (VB) 2 Ron, of 62 MW cm2.",
author = "Atsushi Nishikawa and Kazuhide Kumakura and Tetsuya Akasaka and Toshiki Makimoto",
year = "2005",
doi = "10.1063/1.2140483",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Current-voltage characteristics of p-InGaNn-GaN vertical conducting diodes on n+ -SiC substrates

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

PY - 2005

Y1 - 2005

N2 - p-InGaNn-GaN vertical conducting diodes have been grown on n+ -SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8-4.0 V at a forward current density of 100 A cm2 with an on-state resistance of ∼1.3 mω cm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51 mω cm2, leading to the figure-of-merit, (VB) 2 Ron, of 62 MW cm2.

AB - p-InGaNn-GaN vertical conducting diodes have been grown on n+ -SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8-4.0 V at a forward current density of 100 A cm2 with an on-state resistance of ∼1.3 mω cm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51 mω cm2, leading to the figure-of-merit, (VB) 2 Ron, of 62 MW cm2.

UR - http://www.scopus.com/inward/record.url?scp=28444488884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444488884&partnerID=8YFLogxK

U2 - 10.1063/1.2140483

DO - 10.1063/1.2140483

M3 - Article

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233505

ER -