Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles

Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Cu2ZnSn(S,Se)4 (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages699-702
Number of pages4
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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