Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles

Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Cu2ZnSn(S,Se)4 (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.

    Original languageEnglish
    Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages699-702
    Number of pages4
    ISBN (Electronic)9781509039142
    DOIs
    Publication statusPublished - 2016 Nov 21
    Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
    Duration: 2016 Aug 222016 Aug 25

    Other

    Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
    CountryJapan
    CitySendai
    Period16/8/2216/8/25

    Fingerprint

    Nanoparticles
    Vapor pressure
    Thin films
    nanoparticles
    vapor pressure
    thin films
    Annealing
    Crystals
    annealing
    crystals
    Energy gap
    Semiconductor materials
    X ray diffraction
    diffraction
    Cu2ZnSnS4
    x rays
    Temperature
    temperature

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

    Cite this

    Taki, S., Umejima, Y., Uruno, A., Zhang, X., & Kobayashi, M. (2016). Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 699-702). [7751466] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751466

    Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles. / Taki, Shunya; Umejima, Yuto; Uruno, Aya; Zhang, Xianfeng; Kobayashi, Masakazu.

    16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 699-702 7751466.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Taki, S, Umejima, Y, Uruno, A, Zhang, X & Kobayashi, M 2016, Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751466, Institute of Electrical and Electronics Engineers Inc., pp. 699-702, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751466
    Taki S, Umejima Y, Uruno A, Zhang X, Kobayashi M. Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 699-702. 7751466 https://doi.org/10.1109/NANO.2016.7751466
    Taki, Shunya ; Umejima, Yuto ; Uruno, Aya ; Zhang, Xianfeng ; Kobayashi, Masakazu. / Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 699-702
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