Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles

Shunya Taki; Yuto Umejima; Aya Uruno; Xianfeng Zhang; Masakazu Kobayashi

doi:10.1109/NANO.2016.7751466

Cu₂ZnSn(S,Se)₄ thin films prepared using Cu₂ZnSnS₄ nanoparticles

Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Cu₂ZnSn(S,Se)₄ (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.

Original language	English
Title of host publication	16th International Conference on Nanotechnology - IEEE NANO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	699-702
Number of pages	4
ISBN (Electronic)	9781509039142
DOIs	https://doi.org/10.1109/NANO.2016.7751466
Publication status	Published - 2016 Nov 21
Event	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan Duration: 2016 Aug 22 → 2016 Aug 25

Publication series

Name	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country/Territory	Japan
City	Sendai
Period	16/8/22 → 16/8/25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/NANO.2016.7751466

Cite this

Taki, S., Umejima, Y., Uruno, A., Zhang, X., & Kobayashi, M. (2016). Cu₂ZnSn(S,Se)₄ thin films prepared using Cu₂ZnSnS₄ nanoparticles. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 699-702). [7751466] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751466

Cu₂ZnSn(S,Se)₄ thin films prepared using Cu₂ZnSnS₄ nanoparticles. / Taki, Shunya; Umejima, Yuto; Uruno, Aya et al.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 699-702 7751466 (16th International Conference on Nanotechnology - IEEE NANO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Taki, S, Umejima, Y, Uruno, A, Zhang, X & Kobayashi, M 2016, Cu₂ZnSn(S,Se)₄ thin films prepared using Cu₂ZnSnS₄ nanoparticles. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751466, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 699-702, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751466

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abstract = "Cu2ZnSn(S,Se)4 (CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were prepared by the selenidation of CZTS film, and the Se mole ratio was tuned by changing annealing conditions. The film quality of the obtained CZTSSe was characterized by X-ray diffraction (XRD) and Hall measurements. It was revealed that both the supply of Se vapor pressure and the annealing temperature of CZTS were controlling parameters for the selenidation of the film. The crystal quality of CZTSSe was also influenced by the supply of Se vapor pressure.",

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