Damage in a GaAs surface caused by RF-sputter deposition of SiO2

Katsushiko Mitani, Toshihiro Kawano

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

Structural and optical changes in a GaAs surface due to rf sputter deposition of SiO2 were investigated by means of transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE). A blight-field image indicates the occurrence of a surface-modified layer of about 7-9 nm thickness in the GaAs surface after SiO2 deposition, at an rf power density of 1.7 W/cm2. A lattice image shows the increased interfacial roughness between GaAs and SiO2 upon the deposition. The thickness of the optically-modified layer in SiO2-deposited GaAs is estimated by SE, using the amorphous semiconductor dispersion model. At the lower rf power deposition, the extents of damage estimated by TEM and SE were found to be enhanced. Both rf-power and SiO2-deposition-rate dependences of damage suggest that impingement by non-depositing particles in the initial stage causes surface modification.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
PublisherJJAP
Pages4649-4652
Number of pages4
Volume34
Edition9 A
Publication statusPublished - 1995 Sep
Externally publishedYes

Fingerprint

Sputter deposition
Spectroscopic ellipsometry
Transmission electron microscopy
Amorphous semiconductors
Deposition rates
Surface treatment
Surface roughness

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, K., & Kawano, T. (1995). Damage in a GaAs surface caused by RF-sputter deposition of SiO2 . In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A ed., Vol. 34, pp. 4649-4652). JJAP.

Damage in a GaAs surface caused by RF-sputter deposition of SiO2 . / Mitani, Katsushiko; Kawano, Toshihiro.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. JJAP, 1995. p. 4649-4652.

Research output: Chapter in Book/Report/Conference proceedingChapter

Mitani, K & Kawano, T 1995, Damage in a GaAs surface caused by RF-sputter deposition of SiO2 . in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A edn, vol. 34, JJAP, pp. 4649-4652.
Mitani K, Kawano T. Damage in a GaAs surface caused by RF-sputter deposition of SiO2 . In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A ed. Vol. 34. JJAP. 1995. p. 4649-4652
Mitani, Katsushiko ; Kawano, Toshihiro. / Damage in a GaAs surface caused by RF-sputter deposition of SiO2 . Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. JJAP, 1995. pp. 4649-4652
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