Abstract
The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed I-V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm-1 at Vgs ≤ -4 V, Vds ≤ 50 V and a maximum power added efficiency of 51.3% at Vgs ≤ -4 V, Vds ≤ 30 V at 3 GHz on 2 × 50 νm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 νm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (ft) and maximum oscillation frequency (fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 νm HEMTs. To our knowledge, the sputtered SiN x passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.
| Original language | English |
|---|---|
| Article number | 007 |
| Pages (from-to) | 717-721 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 22 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx . / Shiu, J. Y.; Desmaris, V.; Rorsman, N.; Kumakura, K.; Makimoto, Toshiki; Zirath, H.; Chang, E. Y.
In: Semiconductor Science and Technology, Vol. 22, No. 7, 007, 01.07.2007, p. 717-721.Research output: Contribution to journal › Article
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TY - JOUR
T1 - DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
AU - Shiu, J. Y.
AU - Desmaris, V.
AU - Rorsman, N.
AU - Kumakura, K.
AU - Makimoto, Toshiki
AU - Zirath, H.
AU - Chang, E. Y.
PY - 2007/7/1
Y1 - 2007/7/1
N2 - The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed I-V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm-1 at Vgs ≤ -4 V, Vds ≤ 50 V and a maximum power added efficiency of 51.3% at Vgs ≤ -4 V, Vds ≤ 30 V at 3 GHz on 2 × 50 νm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 νm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (ft) and maximum oscillation frequency (fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 νm HEMTs. To our knowledge, the sputtered SiN x passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.
AB - The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed I-V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm-1 at Vgs ≤ -4 V, Vds ≤ 50 V and a maximum power added efficiency of 51.3% at Vgs ≤ -4 V, Vds ≤ 30 V at 3 GHz on 2 × 50 νm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 νm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (ft) and maximum oscillation frequency (fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 νm HEMTs. To our knowledge, the sputtered SiN x passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.
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U2 - 10.1088/0268-1242/22/7/007
DO - 10.1088/0268-1242/22/7/007
M3 - Article
VL - 22
SP - 717
EP - 721
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
M1 - 007
ER -