DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

J. Y. Shiu, V. Desmaris, N. Rorsman, K. Kumakura, Toshiki Makimoto, H. Zirath, E. Y. Chang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The pulsed I-V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm-1 at Vgs ≤ -4 V, Vds ≤ 50 V and a maximum power added efficiency of 51.3% at Vgs ≤ -4 V, Vds ≤ 30 V at 3 GHz on 2 × 50 νm AlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 νm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency (ft) and maximum oscillation frequency (fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 νm HEMTs. To our knowledge, the sputtered SiN x passivation for AlGaN/GaN HEMTs is a unique technique, which has never been published before.

Original languageEnglish
Article number007
Pages (from-to)717-721
Number of pages5
JournalSemiconductor Science and Technology
Volume22
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
direct current
Microwaves
microwaves
Passivation
passivity
Aluminum Oxide
Sapphire
radiant flux density
sapphire
Cutoff frequency
power efficiency
Substrates
Plasma enhanced chemical vapor deposition
continuous radiation
aluminum gallium nitride
time lag
cut-off
vapor deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Shiu, J. Y., Desmaris, V., Rorsman, N., Kumakura, K., Makimoto, T., Zirath, H., & Chang, E. Y. (2007). DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx Semiconductor Science and Technology, 22(7), 717-721. [007]. https://doi.org/10.1088/0268-1242/22/7/007

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx . / Shiu, J. Y.; Desmaris, V.; Rorsman, N.; Kumakura, K.; Makimoto, Toshiki; Zirath, H.; Chang, E. Y.

In: Semiconductor Science and Technology, Vol. 22, No. 7, 007, 01.07.2007, p. 717-721.

Research output: Contribution to journalArticle

Shiu, JY, Desmaris, V, Rorsman, N, Kumakura, K, Makimoto, T, Zirath, H & Chang, EY 2007, 'DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx ', Semiconductor Science and Technology, vol. 22, no. 7, 007, pp. 717-721. https://doi.org/10.1088/0268-1242/22/7/007
Shiu, J. Y. ; Desmaris, V. ; Rorsman, N. ; Kumakura, K. ; Makimoto, Toshiki ; Zirath, H. ; Chang, E. Y. / DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 7. pp. 717-721.
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