DC and RF characteristics in Al2O3/Si 3N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors

Narihiko Maeda*, Takashi Makimura, Takashi Maruyama, Chengxin Wang, Masanobu Hiroki, Haruki Yokoyama, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Al2O3/Si3́N4 insulated-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) have been fabricated, where excellent RF characteristics have been obtained in addition to the low gate leakage current as the result of employing the metal-insulator-semiconductor (MIS) structure. In an HFET with a gate length (Lg) of 0.1 μm, the cutoff frequency (fT) and maximum oscillation frequency (fmax) were estimated to be 70 and 90 GHz, respectively. The drain current density (Id) and transconductance (gm) were 1.30 A/mm and 293mS/mm, respectively. The gate leakage current (Ig) was as low as 4 × 10-5 A/mm even at a forward bias voltage of +3 V.

Original languageEnglish
Pages (from-to)L646-L648
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number20-23
Publication statusPublished - 2005
Externally publishedYes


  • AlGaN
  • AlO
  • Cutoff frequency (f)
  • GaN
  • Gate leakage current
  • HFET
  • Insulated-gate
  • Maximum oscillation frequency (f)
  • Metal-insulator-semiconductor (MIS)
  • SiN

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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