DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Hiroaki Ishizaka, Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    23 Citations (Scopus)

    Abstract

    A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

    Original languageEnglish
    Pages (from-to)378-381
    Number of pages4
    JournalDiamond and Related Materials
    Volume11
    Issue number3-6
    DOIs
    Publication statusPublished - 2002 Mar

    Fingerprint

    MISFET devices
    Diamond
    MIS (semiconductors)
    Diamonds
    field effect transistors
    direct current
    diamonds
    Cutoff frequency
    Transconductance
    Electric network analysis
    Equivalent circuits
    Hydrogen
    transconductance
    equivalent circuits
    cut-off
    oscillations
    output
    hydrogen

    Keywords

    • Current decrease
    • Cut-off frequency
    • Diamond
    • MISFET

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor. / Ishizaka, Hiroaki; Umezawa, Hitoshi; Taniuchi, Hirotada; Arima, Takuya; Fujihara, Naoki; Tachiki, Minoru; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 11, No. 3-6, 03.2002, p. 378-381.

    Research output: Contribution to journalArticle

    Ishizaka, Hiroaki ; Umezawa, Hitoshi ; Taniuchi, Hirotada ; Arima, Takuya ; Fujihara, Naoki ; Tachiki, Minoru ; Kawarada, Hiroshi. / DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor. In: Diamond and Related Materials. 2002 ; Vol. 11, No. 3-6. pp. 378-381.
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    AU - Ishizaka, Hiroaki

    AU - Umezawa, Hitoshi

    AU - Taniuchi, Hirotada

    AU - Arima, Takuya

    AU - Fujihara, Naoki

    AU - Tachiki, Minoru

    AU - Kawarada, Hiroshi

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