DC and RF characteristics of 0.7-μm-gate-length diamond metal-insulator-semiconductor field effect transistor

Hiroaki Ishizaka, Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Naoki Fujihara, Minoru Tachiki, Hiroshi Kawarada

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

A 0.7-μm-gate-length metal-insulator-semiconductor field effect transistor (MISFET) was fabricated on a hydrogen-terminated diamond surface conductive layer. The maximum transconductance of 100 mS/mm was obtained by DC measurement. The cut-off frequency of 11 GHz and the maximum frequency of oscillation of 18 GHz were achieved for the fabricated MISFET biased at VGS=0 V and VDS= -12 V. These are the highest values for diamond MISFETs ever reported. In the MISFET, high-frequency small-signal equivalent circuit analysis is carried out at VGS=O V and VDS= -3, -5, -8, -10 and -12 V. The analysis indicates that the reduction of parasitic resistance between the source and gate is necessary for realizing higher output power.

Original languageEnglish
Pages (from-to)378-381
Number of pages4
JournalDiamond and Related Materials
Volume11
Issue number3-6
DOIs
Publication statusPublished - 2002 Mar 1

Keywords

  • Current decrease
  • Cut-off frequency
  • Diamond
  • MISFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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