DC and RF characterization of RF MOSFET embedding structure

Atsushi Takeshige, Kosuke Katayama, Shuhei Amakawa, Kyoya Takano, Takeshi Yoshida, Minoru Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET test structure, including a transmission line, on a CMOS chip.

Original languageEnglish
Title of host publication2017 International Conference of Microelectronic Test Structures, ICMTS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509036158
DOIs
Publication statusPublished - 2017 Jun 20
Externally publishedYes
Event2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France
Duration: 2017 Mar 272017 Mar 30

Other

Other2017 International Conference of Microelectronic Test Structures, ICMTS 2017
CountryFrance
CityGrenoble
Period17/3/2717/3/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Takeshige, A., Katayama, K., Amakawa, S., Takano, K., Yoshida, T., & Fujishima, M. (2017). DC and RF characterization of RF MOSFET embedding structure. In 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 [7954273] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2017.7954273