DC and RF performance of diamond MISFETs with alumina gate insulator

Kazuyuki Hirama, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

    Original languageEnglish
    Pages (from-to)1349-1351
    Number of pages3
    JournalMaterials Science Forum
    Volume600-603
    DOIs
    Publication statusPublished - 2009

    Fingerprint

    Diamond
    Aluminum Oxide
    Hydrogen
    Diamonds
    Alumina
    field effect transistors
    aluminum oxides
    direct current
    diamonds
    insulators
    Drain current
    Sheet resistance
    Cutoff frequency
    hydrogen plasma
    hydrogen
    Field effect transistors
    high current
    Current density
    cut-off
    Single crystals

    Keywords

    • Diamond
    • Gate Insulator
    • MISFETs
    • RF

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanical Engineering
    • Mechanics of Materials

    Cite this

    DC and RF performance of diamond MISFETs with alumina gate insulator. / Hirama, Kazuyuki; Jingu, Yoshikatsu; Ichikawa, Masaru; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Materials Science Forum, Vol. 600-603, 2009, p. 1349-1351.

    Research output: Contribution to journalArticle

    Hirama, Kazuyuki ; Jingu, Yoshikatsu ; Ichikawa, Masaru ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / DC and RF performance of diamond MISFETs with alumina gate insulator. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 1349-1351.
    @article{15b37b853dda448081f3d85f4c9f80fa,
    title = "DC and RF performance of diamond MISFETs with alumina gate insulator",
    abstract = "We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.",
    keywords = "Diamond, Gate Insulator, MISFETs, RF",
    author = "Kazuyuki Hirama and Yoshikatsu Jingu and Masaru Ichikawa and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2009",
    doi = "10.4028/3-908453-11-9",
    language = "English",
    volume = "600-603",
    pages = "1349--1351",
    journal = "Materials Science Forum",
    issn = "0255-5476",
    publisher = "Trans Tech Publications",

    }

    TY - JOUR

    T1 - DC and RF performance of diamond MISFETs with alumina gate insulator

    AU - Hirama, Kazuyuki

    AU - Jingu, Yoshikatsu

    AU - Ichikawa, Masaru

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2009

    Y1 - 2009

    N2 - We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

    AB - We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

    KW - Diamond

    KW - Gate Insulator

    KW - MISFETs

    KW - RF

    UR - http://www.scopus.com/inward/record.url?scp=63849122723&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=63849122723&partnerID=8YFLogxK

    U2 - 10.4028/3-908453-11-9

    DO - 10.4028/3-908453-11-9

    M3 - Article

    AN - SCOPUS:63849122723

    VL - 600-603

    SP - 1349

    EP - 1351

    JO - Materials Science Forum

    JF - Materials Science Forum

    SN - 0255-5476

    ER -