DC and RF performance of diamond MISFETs with alumina gate insulator

Kazuyuki Hirama, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of-650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages1349-1351
Number of pages3
ISBN (Print)9780878493579
Publication statusPublished - 2009 Jan 1
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 2007 Oct 142007 Oct 19

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

Keywords

  • Diamond
  • Gate Insulator
  • MISFETs
  • RF

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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