De-bondable SiC–SiC wafer bonding via an intermediate Ni nano-film

Fengwen Mu, Miyuki Uomoto, Takehito Shimatsu, Yinghui Wang, Kenichi Iguchi, Haruo Nakazawa, Yoshikazu Takahashi, Eiji Higurashi, Tadatomo Suga

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two SiC wafers were bonded via an intermediate nickel (Ni) nano-film at room temperature without any pressure, which was characterized as a seamless and robust bonding. After the RTA process, the strength of the bonding interface was dramatically decreased and the de-bonding could happen at the interface during pulling test. Both of the mechanisms of bonding and de-bonding have been investigated through interface analyses. The sufficient atomic diffusion between two deposited Ni nano-films together with the interfacial mixing between amorphous SiC and the Ni nano-film contribute to the strong bonding of SiC–SiC. The interfacial precipitation of layered carbon material parallel to the SiC substrates is assumed to be the reason of the interface weakening and de-bonding after annealing. It is believed that the further development of this bonding and de-bonding technology will advance thin SiC device fabrication, where the RTA process at ∼1273 K is widely used.

Original languageEnglish
Pages (from-to)591-595
Number of pages5
JournalApplied Surface Science
Volume465
DOIs
Publication statusPublished - 2019 Jan 28
Externally publishedYes

Keywords

  • Bonding interface
  • De-bonding
  • Precipitated carbon
  • Rapid thermal annealing
  • Thin SiC device
  • Wafer bonding

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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  • Cite this

    Mu, F., Uomoto, M., Shimatsu, T., Wang, Y., Iguchi, K., Nakazawa, H., Takahashi, Y., Higurashi, E., & Suga, T. (2019). De-bondable SiC–SiC wafer bonding via an intermediate Ni nano-film. Applied Surface Science, 465, 591-595. https://doi.org/10.1016/j.apsusc.2018.09.050