DEEP HOLE TRAPS IN VPE p-TYPE InP.

Masahide Inuishi, B. W. Wessels

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Deep hole traps were investigated in vapor phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0. 09, 0. 22, 0. 29, 0. 41 and 0. 50 ev in Al-InP Schottky barriers and p-n** plus junctions. Trap concentrations ranged from 10**1**3 to 10**1**4 cm** minus **3.

Original languageEnglish
Pages (from-to)685-686
Number of pages2
JournalElectronics Letters
Volume17
Issue number19
Publication statusPublished - 1981 Jan 1
Externally publishedYes

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Hole traps
Vapor phase epitaxy
Deep level transient spectroscopy
Activation energy
Vapors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Inuishi, M., & Wessels, B. W. (1981). DEEP HOLE TRAPS IN VPE p-TYPE InP. Electronics Letters, 17(19), 685-686.

DEEP HOLE TRAPS IN VPE p-TYPE InP. / Inuishi, Masahide; Wessels, B. W.

In: Electronics Letters, Vol. 17, No. 19, 01.01.1981, p. 685-686.

Research output: Contribution to journalArticle

Inuishi, M & Wessels, BW 1981, 'DEEP HOLE TRAPS IN VPE p-TYPE InP.', Electronics Letters, vol. 17, no. 19, pp. 685-686.
Inuishi M, Wessels BW. DEEP HOLE TRAPS IN VPE p-TYPE InP. Electronics Letters. 1981 Jan 1;17(19):685-686.
Inuishi, Masahide ; Wessels, B. W. / DEEP HOLE TRAPS IN VPE p-TYPE InP. In: Electronics Letters. 1981 ; Vol. 17, No. 19. pp. 685-686.
@article{c600ff2d353b4ce79281799e95af98b6,
title = "DEEP HOLE TRAPS IN VPE p-TYPE InP.",
abstract = "Deep hole traps were investigated in vapor phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0. 09, 0. 22, 0. 29, 0. 41 and 0. 50 ev in Al-InP Schottky barriers and p-n** plus junctions. Trap concentrations ranged from 10**1**3 to 10**1**4 cm** minus **3.",
author = "Masahide Inuishi and Wessels, {B. W.}",
year = "1981",
month = "1",
day = "1",
language = "English",
volume = "17",
pages = "685--686",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "19",

}

TY - JOUR

T1 - DEEP HOLE TRAPS IN VPE p-TYPE InP.

AU - Inuishi, Masahide

AU - Wessels, B. W.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - Deep hole traps were investigated in vapor phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0. 09, 0. 22, 0. 29, 0. 41 and 0. 50 ev in Al-InP Schottky barriers and p-n** plus junctions. Trap concentrations ranged from 10**1**3 to 10**1**4 cm** minus **3.

AB - Deep hole traps were investigated in vapor phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0. 09, 0. 22, 0. 29, 0. 41 and 0. 50 ev in Al-InP Schottky barriers and p-n** plus junctions. Trap concentrations ranged from 10**1**3 to 10**1**4 cm** minus **3.

UR - http://www.scopus.com/inward/record.url?scp=0019608252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019608252&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 685

EP - 686

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 19

ER -