Deep hole traps in VPE p-type InP

M. Inuishi, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Deep hole traps were investigated in vapour phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0.09, 0.22, 0.29, 0.41 and 0.50 eV in Al-InP Schottky barriers and p-n+ junctions. Trap concentrations ranged from 1013 to 1014 cm-3.

Original languageEnglish
Pages (from-to)685-686
Number of pages2
JournalElectronics Letters
Volume17
Issue number19
DOIs
Publication statusPublished - 1981 Sep 17
Externally publishedYes

Keywords

  • Deep levels
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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