Deep hole traps were investigated in vapour phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0.09, 0.22, 0.29, 0.41 and 0.50 eV in Al-InP Schottky barriers and p-n+ junctions. Trap concentrations ranged from 1013 to 1014 cm-3.
- Deep levels
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering