Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition

Takahira Miyagi, Tomoyuki Ogawa, Masayuki Kamei, Yoshiki Wada, Takefumi Mitsuhashi, Atsushi Yamazaki, Eiji Ohta, Tetsuya Sato

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    The deep level transient spectroscopy (DLTS) study of anatase-type TiO2 material was performed for the first time. The anatase film was epitaxialy grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metal organic chemical vapor deposition. The photoluminescence characteristics of this anatase film were identical to those in previous reports, where they were attributed to the radiative recombination of self-trapped excitons. According to the DLTS analysis, it was revealed that this anatase film had a characteristic deep level located at 0.96 eV below the bottom of the conduction band with large concentration (6.5 × 1016/cm3) and capture cross section (8.3 × 10-13 cm2. Since the capture cross section of this level appeared to be too large to be caused by point defects, the origin of this deep level was attributed to line defects such as dislocations.

    Original languageEnglish
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume40
    Issue number4 B
    Publication statusPublished - 2001 Apr 15

    Fingerprint

    Deep level transient spectroscopy
    Epitaxial films
    Organic chemicals
    anatase
    Titanium dioxide
    metalorganic chemical vapor deposition
    Chemical vapor deposition
    Metals
    spectroscopy
    absorption cross sections
    Point defects
    Conduction bands
    Excitons
    radiative recombination
    Photoluminescence
    point defects
    Crystalline materials
    conduction bands
    Defects
    excitons

    Keywords

    • Anatase
    • Deep level
    • DLTS
    • Photoluminescene
    • TiO

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition. / Miyagi, Takahira; Ogawa, Tomoyuki; Kamei, Masayuki; Wada, Yoshiki; Mitsuhashi, Takefumi; Yamazaki, Atsushi; Ohta, Eiji; Sato, Tetsuya.

    In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 4 B, 15.04.2001.

    Research output: Contribution to journalArticle

    Miyagi, Takahira ; Ogawa, Tomoyuki ; Kamei, Masayuki ; Wada, Yoshiki ; Mitsuhashi, Takefumi ; Yamazaki, Atsushi ; Ohta, Eiji ; Sato, Tetsuya. / Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition. In: Japanese Journal of Applied Physics, Part 2: Letters. 2001 ; Vol. 40, No. 4 B.
    @article{c9885b48216649a68a255b693ece9dd3,
    title = "Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition",
    abstract = "The deep level transient spectroscopy (DLTS) study of anatase-type TiO2 material was performed for the first time. The anatase film was epitaxialy grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metal organic chemical vapor deposition. The photoluminescence characteristics of this anatase film were identical to those in previous reports, where they were attributed to the radiative recombination of self-trapped excitons. According to the DLTS analysis, it was revealed that this anatase film had a characteristic deep level located at 0.96 eV below the bottom of the conduction band with large concentration (6.5 × 1016/cm3) and capture cross section (8.3 × 10-13 cm2. Since the capture cross section of this level appeared to be too large to be caused by point defects, the origin of this deep level was attributed to line defects such as dislocations.",
    keywords = "Anatase, Deep level, DLTS, Photoluminescene, TiO",
    author = "Takahira Miyagi and Tomoyuki Ogawa and Masayuki Kamei and Yoshiki Wada and Takefumi Mitsuhashi and Atsushi Yamazaki and Eiji Ohta and Tetsuya Sato",
    year = "2001",
    month = "4",
    day = "15",
    language = "English",
    volume = "40",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4 B",

    }

    TY - JOUR

    T1 - Deep level transient spectroscopy analysis of an anatase epitaxial film grown by metal organic chemical vapor deposition

    AU - Miyagi, Takahira

    AU - Ogawa, Tomoyuki

    AU - Kamei, Masayuki

    AU - Wada, Yoshiki

    AU - Mitsuhashi, Takefumi

    AU - Yamazaki, Atsushi

    AU - Ohta, Eiji

    AU - Sato, Tetsuya

    PY - 2001/4/15

    Y1 - 2001/4/15

    N2 - The deep level transient spectroscopy (DLTS) study of anatase-type TiO2 material was performed for the first time. The anatase film was epitaxialy grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metal organic chemical vapor deposition. The photoluminescence characteristics of this anatase film were identical to those in previous reports, where they were attributed to the radiative recombination of self-trapped excitons. According to the DLTS analysis, it was revealed that this anatase film had a characteristic deep level located at 0.96 eV below the bottom of the conduction band with large concentration (6.5 × 1016/cm3) and capture cross section (8.3 × 10-13 cm2. Since the capture cross section of this level appeared to be too large to be caused by point defects, the origin of this deep level was attributed to line defects such as dislocations.

    AB - The deep level transient spectroscopy (DLTS) study of anatase-type TiO2 material was performed for the first time. The anatase film was epitaxialy grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metal organic chemical vapor deposition. The photoluminescence characteristics of this anatase film were identical to those in previous reports, where they were attributed to the radiative recombination of self-trapped excitons. According to the DLTS analysis, it was revealed that this anatase film had a characteristic deep level located at 0.96 eV below the bottom of the conduction band with large concentration (6.5 × 1016/cm3) and capture cross section (8.3 × 10-13 cm2. Since the capture cross section of this level appeared to be too large to be caused by point defects, the origin of this deep level was attributed to line defects such as dislocations.

    KW - Anatase

    KW - Deep level

    KW - DLTS

    KW - Photoluminescene

    KW - TiO

    UR - http://www.scopus.com/inward/record.url?scp=0035870365&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0035870365&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0035870365

    VL - 40

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4 B

    ER -