Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures

Masahide Inuishi, Bruce W. Wessels

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Deep level defect states in InP metal/oxide/semiconductor (MOS) diode structures prepared from n-type vapor phase epitaxial material were determined by transient capacitance spectroscopy. In unannealed MOS diodes a total of three bulk traps were observed with energies of Ec-0.44, Ec-0.53 and Ec-0.80 eV. The interface state density was found to be continuous in the range of Ec-0.14 eV≤E*≤Ec-0.44 eV and increased toward the midgap. The capture cross section prefactor of the interface states was of the order of 10-16 cm2 and was independent of energy in the energy range from Ec-0.30 to Ec-0.44 eV.

Original languageEnglish
Pages (from-to)141-153
Number of pages13
JournalThin Solid Films
Volume103
Issue number1-3
DOIs
Publication statusPublished - 1983
Externally publishedYes

Fingerprint

Semiconductor diodes
Deep level transient spectroscopy
Interface states
metal oxide semiconductors
semiconductor diodes
Metals
traps
spectroscopy
Vapors
absorption cross sections
Defects
energy
capacitance
vapor phases
defects
Oxide semiconductors

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Deep level transient spectroscopy of interface and bulk trap states in InP metal/oxide/semiconductor structures. / Inuishi, Masahide; Wessels, Bruce W.

In: Thin Solid Films, Vol. 103, No. 1-3, 1983, p. 141-153.

Research output: Contribution to journalArticle

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