Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

S. Venkatesan; R. F. Pierret; J. Qiu; M. Kobayashi; R. L. Gunshor; L. A. Kolodziejski

doi:10.1063/1.344077

Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

S. Venkatesan^*, R. F. Pierret, J. Qiu, M. Kobayashi, R. L. Gunshor, L. A. Kolodziejski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

Original language	English
Pages (from-to)	3656-3660
Number of pages	5
Journal	Journal of Applied Physics
Volume	66
Issue number	8
DOIs	https://doi.org/10.1063/1.344077
Publication status	Published - 1989 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy",

abstract = "Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.",

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T1 - Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

AU - Venkatesan, S.

AU - Pierret, R. F.

AU - Qiu, J.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Kolodziejski, L. A.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

AB - Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

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Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

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