Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

S. Venkatesan, R. F. Pierret, J. Qiu, M. Kobayashi, R. L. Gunshor, L. A. Kolodziejski

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Abstract

Results of a deep-level transient spectroscopy study of Ga-doped ZnSe thin films grown by molecular-beam epitaxy are presented. Two prominent deep levels were observed in all the samples investigated. The concentration of the trap detected at 0.34 eV below the conduction-band edge was essentially independent of the doping concentration and is attributed to native defects arising from Se vacancies in the ZnSe films. The second level with an activation energy of 0.26 eV shows a very strong doping dependence and is tentatively identified as arising from dopant-site (gallium-on-zinc-site) defects complexed with selenium vacancies. Preliminary results also indicate that planar doping of ZnSe significantly reduces the concentration of the Ga-vacancy complex.

Original languageEnglish
Pages (from-to)3656-3660
Number of pages5
JournalJournal of Applied Physics
Volume66
Issue number8
DOIs
Publication statusPublished - 1989 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Venkatesan, S., Pierret, R. F., Qiu, J., Kobayashi, M., Gunshor, R. L., & Kolodziejski, L. A. (1989). Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics, 66(8), 3656-3660. https://doi.org/10.1063/1.344077