Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

    Original languageEnglish
    Pages (from-to)1814-1818
    Number of pages5
    JournalDiamond and Related Materials
    Volume12
    Issue number10-11
    DOIs
    Publication statusPublished - 2003 Oct

    Fingerprint

    Diamond
    Diamonds
    field effect transistors
    diamonds
    Transconductance
    transconductance
    Field effect transistors
    alternating current
    tendencies
    direct current
    insulators

    Keywords

    • Diamond MISFETs
    • Sub-micron gate
    • Transconductance

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Matsudaira, H., Takuya, A., Umezawa, H., Miyamoto, S., Ishizaka, H., Tachiki, M., & Kawarada, H. (2003). Deep sub-micron gate diamond MISFETs. Diamond and Related Materials, 12(10-11), 1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5

    Deep sub-micron gate diamond MISFETs. / Matsudaira, Hiroki; Takuya, Arima; Umezawa, Hitoshi; Miyamoto, Shingo; Ishizaka, Hiroaki; Tachiki, Minoru; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 12, No. 10-11, 10.2003, p. 1814-1818.

    Research output: Contribution to journalArticle

    Matsudaira, H, Takuya, A, Umezawa, H, Miyamoto, S, Ishizaka, H, Tachiki, M & Kawarada, H 2003, 'Deep sub-micron gate diamond MISFETs', Diamond and Related Materials, vol. 12, no. 10-11, pp. 1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5
    Matsudaira H, Takuya A, Umezawa H, Miyamoto S, Ishizaka H, Tachiki M et al. Deep sub-micron gate diamond MISFETs. Diamond and Related Materials. 2003 Oct;12(10-11):1814-1818. https://doi.org/10.1016/S0925-9635(03)00273-5
    Matsudaira, Hiroki ; Takuya, Arima ; Umezawa, Hitoshi ; Miyamoto, Shingo ; Ishizaka, Hiroaki ; Tachiki, Minoru ; Kawarada, Hiroshi. / Deep sub-micron gate diamond MISFETs. In: Diamond and Related Materials. 2003 ; Vol. 12, No. 10-11. pp. 1814-1818.
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