Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira; Arima Takuya; Hitoshi Umezawa; Shingo Miyamoto; Hiroaki Ishizaka; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(03)00273-5

Deep sub-micron gate diamond MISFETs

Hiroki Matsudaira^*, Arima Takuya, Hitoshi Umezawa, Shingo Miyamoto, Hiroaki Ishizaka, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f _T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

Original language	English
Pages (from-to)	1814-1818
Number of pages	5
Journal	Diamond and Related Materials
Volume	12
Issue number	10-11
DOIs	https://doi.org/10.1016/S0925-9635(03)00273-5
Publication status	Published - 2003

Keywords

Diamond MISFETs
Sub-micron gate
Transconductance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(03)00273-5

Cite this

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title = "Deep sub-micron gate diamond MISFETs",

abstract = "The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.",

keywords = "Diamond MISFETs, Sub-micron gate, Transconductance",

author = "Hiroki Matsudaira and Arima Takuya and Hitoshi Umezawa and Shingo Miyamoto and Hiroaki Ishizaka and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. This work is also supported partially by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2003",

doi = "10.1016/S0925-9635(03)00273-5",

language = "English",

volume = "12",

pages = "1814--1818",

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number = "10-11",

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TY - JOUR

T1 - Deep sub-micron gate diamond MISFETs

AU - Matsudaira, Hiroki

AU - Takuya, Arima

AU - Umezawa, Hitoshi

AU - Miyamoto, Shingo

AU - Ishizaka, Hiroaki

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan. This work is also supported partially by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2003

Y1 - 2003

N2 - The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

AB - The basic characteristics of the short channel FETs have been investigated for the high-frequency performance of the diamond MISFETs. The deep sub-micron gate (0.23-0.5 μm) diamond MISFETs were fabricated on an H-terminated diamond surface. The short channel effect is well suppressed utilizing thin gate insulator. Accordingly, the transconductance is improved by reduction of gate length down to 0.2 μm. This tendency is observed in diamond MISFETs for the first time. Maximum transconductance reaches 71 mS/mm in DC mode and 51 mS/mm in AC mode. The f T of 40 GHz is expected in 0.2 μm gate MISFETs as a result.

KW - Diamond MISFETs

KW - Sub-micron gate

KW - Transconductance

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U2 - 10.1016/S0925-9635(03)00273-5

DO - 10.1016/S0925-9635(03)00273-5

M3 - Article

AN - SCOPUS:0346119976

SN - 0925-9635

VL - 12

SP - 1814

EP - 1818

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 10-11

ER -

Deep sub-micron gate diamond MISFETs

Abstract

Keywords

ASJC Scopus subject areas

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