Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS)

M. Shimizu, Masahide Inuishi, T. Ogawa, H. Miyatake, K. Tsukamoto, Y. Akasaka

Research output: Contribution to journalArticle

Abstract

A novel isolation technology, called buried insulator between source/drain polysilicon (BIPS), is described. The BIPS isolation structure consists of refilling CVD (chemical vapor deposition) oxides in openings between source/drain polysilicon patterns by double photoresist etchback. A defect- and bird's-beak-free process can be realized by this isolation. Devices with BIPS isolation are compared with LOCOS (local oxidation of silicon) with respect to isolation parasitic effects and current drive capability. A 0.5-μm isolation is achieved, and the narrow channel effects are almost supressed with BIPS isolation. The subthreshold characteristics of devices with BIPS isolation give the same shape value as those for conventional devices with LOCOS isolation. A ring oscillator with BIPS isolation exhibits a propagation delay time of 69 ps/gate.

Original languageEnglish
Pages (from-to)96-99
Number of pages4
JournalUnknown Journal
Publication statusPublished - 1988 Dec
Externally publishedYes

Fingerprint

Polysilicon
isolation
insulators
Silicon
Oxidation
Birds
Photoresists
Chemical vapor deposition
Time delay
Defects
Oxides
refilling
oxidation
birds
silicon
photoresists
time lag
oscillators
vapor deposition
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shimizu, M., Inuishi, M., Ogawa, T., Miyatake, H., Tsukamoto, K., & Akasaka, Y. (1988). Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS). Unknown Journal, 96-99.

Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS). / Shimizu, M.; Inuishi, Masahide; Ogawa, T.; Miyatake, H.; Tsukamoto, K.; Akasaka, Y.

In: Unknown Journal, 12.1988, p. 96-99.

Research output: Contribution to journalArticle

Shimizu, M, Inuishi, M, Ogawa, T, Miyatake, H, Tsukamoto, K & Akasaka, Y 1988, 'Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS)', Unknown Journal, pp. 96-99.
Shimizu, M. ; Inuishi, Masahide ; Ogawa, T. ; Miyatake, H. ; Tsukamoto, K. ; Akasaka, Y. / Deep submicron device isolation with buried insulator between source/drain polysilicon (BIPS). In: Unknown Journal. 1988 ; pp. 96-99.
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