Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces

Wei Che Sun, Taizo Nakasu, Keisuke Odaka, Masakazu Kobayashi, Toshiaki Asahi

    Research output: Contribution to journalArticle

    Abstract

    ZnTe electro-optic waveguide device has a great potential for the practical applications. The introduction of low Mg% cladding layer to the ZnMgTe/ZnTe/ZnMgTe waveguide structure was performed to circumvent the effect of large lattice mismatch between ZnMgTe and ZnTe, and to improve the crystallographic properties. Various two-step index ZnTe waveguide structures were fabricated by molecular beam epitaxy. The structure with 0.1 μm (Mg 9%) interlayer and 0.6 μm (Mg 26%) cladding layer showed significant defect density reduction compared to the single-step index ZnTe waveguide (Mg 20%) due the much smaller lattice mismatch between the ZnTe core layer and the ZnMgTe interlayer. However, the average Mg content of ZnMgTe layers needs to be carefully controlled to prevent the drop of the optical confinement.

    Original languageEnglish
    Article number04F104
    JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
    Volume35
    Issue number4
    DOIs
    Publication statusPublished - 2017 Jul 1

    Fingerprint

    Defect density
    Optical waveguides
    optical waveguides
    Waveguides
    waveguides
    Lattice mismatch
    defects
    interlayers
    Electrooptical effects
    Molecular beam epitaxy
    electro-optics
    molecular beam epitaxy

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Instrumentation
    • Process Chemistry and Technology
    • Surfaces, Coatings and Films
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this

    Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces. / Sun, Wei Che; Nakasu, Taizo; Odaka, Keisuke; Kobayashi, Masakazu; Asahi, Toshiaki.

    In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 4, 04F104, 01.07.2017.

    Research output: Contribution to journalArticle

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    AU - Asahi, Toshiaki

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