Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition

H. Nonaka, S. Ichimura, K. Arai, C. Le Gressus

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16 Citations (Scopus)

Abstract

Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO2 films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen‐deficient defects under the constant total dose condition. Among the films examined, it was found that F‐doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalSurface and Interface Analysis
Volume16
Issue number1-12
DOIs
Publication statusPublished - 1990 Jul

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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