Defect formation observed by AES in a‐SiO₂ films prepared by photochemical vapour deposition

Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO₂ films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen‐deficient defects under the constant total dose condition. Among the films examined, it was found that F‐doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.