Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition

H. Nonaka, Shingo Ichimura, K. Arai, C. Le Gressus

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Damageless conditions in AES measurement were examined carefully on both thermally oxidized and photochemical vapour deposited amorphous SiO2 films as a function of dose rate and total dose. The lower dose rate resulted in the formation of a higher density of oxygen‐deficient defects under the constant total dose condition. Among the films examined, it was found that F‐doped films prepared by photochemical vapour deposition best resisted electron damage. The results are discussed using the model of defect generation consisting of a cascade process, bond breaking and diffusion of oxygen.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalSurface and Interface Analysis
Volume16
Issue number1-12
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes

Fingerprint

Vapor deposition
vapor deposition
dosage
Defects
defects
Amorphous films
Vapors
Oxygen
Electrons
cascades
vapors
damage
oxygen
electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Defect formation observed by AES in a‐SiO2 films prepared by photochemical vapour deposition. / Nonaka, H.; Ichimura, Shingo; Arai, K.; Le Gressus, C.

In: Surface and Interface Analysis, Vol. 16, No. 1-12, 01.01.1990, p. 435-439.

Research output: Contribution to journalArticle

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