Abstract
This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.
| Original language | English |
|---|---|
| Pages (from-to) | 4431-4434 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 7 A |
| Publication status | Published - 1997 Jul |
| Externally published | Yes |
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Keywords
- Aluminum
- Contamination
- Gate oxide
- Interface state
- Ion implantation
- Junction leakage current
- SiO/Si interface
- ULSI
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Engineering(all)
Cite this
Degradation of n+/p junction characteristics by aluminum contamination. / Itoga, Toshihiko; Kojima, Hisao; Hiraiwa, Atsushi; Ohkura, Makoto.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 7 A, 07.1997, p. 4431-4434.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Degradation of n+/p junction characteristics by aluminum contamination
AU - Itoga, Toshihiko
AU - Kojima, Hisao
AU - Hiraiwa, Atsushi
AU - Ohkura, Makoto
PY - 1997/7
Y1 - 1997/7
N2 - This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.
AB - This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.
KW - Aluminum
KW - Contamination
KW - Gate oxide
KW - Interface state
KW - Ion implantation
KW - Junction leakage current
KW - SiO/Si interface
KW - ULSI
UR - http://www.scopus.com/inward/record.url?scp=0031190214&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031190214&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031190214
VL - 36
SP - 4431
EP - 4434
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 A
ER -