Degradation of n+/p junction characteristics by aluminum contamination

Toshihiko Itoga, Hisao Kojima, Atsushi Hiraiwa, Makoto Ohkura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.

Original languageEnglish
Pages (from-to)4431-4434
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number7 A
Publication statusPublished - 1997 Jul
Externally publishedYes

Fingerprint

p-n junctions
contamination
Contamination
degradation
aluminum
Aluminum
Degradation
Interface states
Electric breakdown
electrical faults
Ion implantation
Leakage currents
ion implantation
leakage
dosage
Oxides
oxides

Keywords

  • Aluminum
  • Contamination
  • Gate oxide
  • Interface state
  • Ion implantation
  • Junction leakage current
  • SiO/Si interface
  • ULSI

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

Degradation of n+/p junction characteristics by aluminum contamination. / Itoga, Toshihiko; Kojima, Hisao; Hiraiwa, Atsushi; Ohkura, Makoto.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 7 A, 07.1997, p. 4431-4434.

Research output: Contribution to journalArticle

Itoga, Toshihiko ; Kojima, Hisao ; Hiraiwa, Atsushi ; Ohkura, Makoto. / Degradation of n+/p junction characteristics by aluminum contamination. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1997 ; Vol. 36, No. 7 A. pp. 4431-4434.
@article{98e9cd06e4a24dd8b3454585d3b5b968,
title = "Degradation of n+/p junction characteristics by aluminum contamination",
abstract = "This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.",
keywords = "Aluminum, Contamination, Gate oxide, Interface state, Ion implantation, Junction leakage current, SiO/Si interface, ULSI",
author = "Toshihiko Itoga and Hisao Kojima and Atsushi Hiraiwa and Makoto Ohkura",
year = "1997",
month = "7",
language = "English",
volume = "36",
pages = "4431--4434",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7 A",

}

TY - JOUR

T1 - Degradation of n+/p junction characteristics by aluminum contamination

AU - Itoga, Toshihiko

AU - Kojima, Hisao

AU - Hiraiwa, Atsushi

AU - Ohkura, Makoto

PY - 1997/7

Y1 - 1997/7

N2 - This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.

AB - This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.

KW - Aluminum

KW - Contamination

KW - Gate oxide

KW - Interface state

KW - Ion implantation

KW - Junction leakage current

KW - SiO/Si interface

KW - ULSI

UR - http://www.scopus.com/inward/record.url?scp=0031190214&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031190214&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031190214

VL - 36

SP - 4431

EP - 4434

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -