DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara, Satoshi Takano, Masafumi Kimata, Takao Nakano

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

Original languageEnglish
Pages (from-to)1198-1199
Number of pages2
JournalIEEE Transactions on Electron Devices
VolumeED-28
Issue number10
Publication statusPublished - 1981 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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