DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

Tsutomu Yoshihara, Satoshi Takano, Masafumi Kimata, Takao Nakano

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

Original languageEnglish
Pages (from-to)1198-1199
Number of pages2
JournalIEEE Transactions on Electron Devices
VolumeED-28
Issue number10
Publication statusPublished - 1981 Oct
Externally publishedYes

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ram
Alpha particles
Random access storage
alpha particles
Irradiation
degradation
Degradation
irradiation
Radiation damage
radiation damage
Defects
causes
defects
cells
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Yoshihara, T., Takano, S., Kimata, M., & Nakano, T. (1981). DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. IEEE Transactions on Electron Devices, ED-28(10), 1198-1199.

DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. / Yoshihara, Tsutomu; Takano, Satoshi; Kimata, Masafumi; Nakano, Takao.

In: IEEE Transactions on Electron Devices, Vol. ED-28, No. 10, 10.1981, p. 1198-1199.

Research output: Contribution to journalArticle

Yoshihara, T, Takano, S, Kimata, M & Nakano, T 1981, 'DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.', IEEE Transactions on Electron Devices, vol. ED-28, no. 10, pp. 1198-1199.
Yoshihara, Tsutomu ; Takano, Satoshi ; Kimata, Masafumi ; Nakano, Takao. / DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES. In: IEEE Transactions on Electron Devices. 1981 ; Vol. ED-28, No. 10. pp. 1198-1199.
@article{d2cd9758cef840568ee3a4238ae4de2a,
title = "DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.",
abstract = "Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.",
author = "Tsutomu Yoshihara and Satoshi Takano and Masafumi Kimata and Takao Nakano",
year = "1981",
month = "10",
language = "English",
volume = "ED-28",
pages = "1198--1199",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - DEGRADATION OF REFRESH TIME IN DYNAMIC MOS RAM BY IRRADIATION OF ALPHA PARTICLES.

AU - Yoshihara, Tsutomu

AU - Takano, Satoshi

AU - Kimata, Masafumi

AU - Nakano, Takao

PY - 1981/10

Y1 - 1981/10

N2 - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

AB - Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8. 89 multiplied by 10** minus **5 pA/alpha.

UR - http://www.scopus.com/inward/record.url?scp=0019625003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019625003&partnerID=8YFLogxK

M3 - Article

VL - ED-28

SP - 1198

EP - 1199

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -