Degradation of SiO2/Si interface characteristics by aluminum contamination

T. Itoga; H. Kojima; A. Hiraiwa

Degradation of SiO₂/Si interface characteristics by aluminum contamination

T. Itoga, H. Kojima, A. Hiraiwa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper discusses the effects of Al contamination on SiO₂/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Place of Publication	Tokyo, Japan
Publisher	Publ by Business Cent for Acad Soc Japan
Pages	434-436
Number of pages	3
Publication status	Published - 1992
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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Cite this

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title = "Degradation of SiO2/Si interface characteristics by aluminum contamination",

abstract = "This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.",

author = "T. Itoga and H. Kojima and A. Hiraiwa",

year = "1992",

language = "English",

pages = "434--436",

booktitle = "Conference on Solid State Devices and Materials",

publisher = "Publ by Business Cent for Acad Soc Japan",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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T1 - Degradation of SiO2/Si interface characteristics by aluminum contamination

AU - Itoga, T.

AU - Kojima, H.

AU - Hiraiwa, A.

PY - 1992

Y1 - 1992

N2 - This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.

AB - This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.

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M3 - Conference contribution

AN - SCOPUS:0026960418

SP - 434

EP - 436

BT - Conference on Solid State Devices and Materials

PB - Publ by Business Cent for Acad Soc Japan

CY - Tokyo, Japan

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992