Degradation of SiO2/Si interface characteristics by aluminum contamination

T. Itoga, H. Kojima, A. Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
Place of PublicationTokyo, Japan
PublisherPubl by Business Cent for Acad Soc Japan
Pages434-436
Number of pages3
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Itoga, T., Kojima, H., & Hiraiwa, A. (1992). Degradation of SiO2/Si interface characteristics by aluminum contamination. In Conference on Solid State Devices and Materials (pp. 434-436). Publ by Business Cent for Acad Soc Japan.