Abstract
This paper discusses the effects of Al contamination on SiO2/Si interface characteristics. The interface state density increases as the Al contamination level increases, and the influence is greater when the oxide layer becomes thinner. This is because contaminating Al is segregated in the oxide layer and remains very close to the oxide surface. Since Al is, and will continue to be, the most widely used material for process equipments, Al contamination control might become one of the key issues in achieving future giga-scale ULSIs.
| Original language | English |
|---|---|
| Title of host publication | Conference on Solid State Devices and Materials |
| Place of Publication | Tokyo, Japan |
| Publisher | Publ by Business Cent for Acad Soc Japan |
| Pages | 434-436 |
| Number of pages | 3 |
| Publication status | Published - 1992 |
| Externally published | Yes |
| Event | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- Engineering(all)
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Itoga, T., Kojima, H., & Hiraiwa, A. (1992). Degradation of SiO2/Si interface characteristics by aluminum contamination. In Conference on Solid State Devices and Materials (pp. 434-436). Publ by Business Cent for Acad Soc Japan.